Heteroepitaxy of ZnO film on Si (111) substrate using a 3C–SiC buffer layer

Zhu, Jin; Lin, Bing; Sun, Xiankai; Yao, Ran; Shi, Chaoshu; Fu, Zhaoming

doi:10.1016/j.tsf.2004.11.068

Cited by 50 publications

(28 citation statements)

References 17 publications

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“…With the increase of the annealing temperature to 800°C, all ZnO peaks have the strongest intensities. The FWHM of this peak becomes narrow, which indicates that the crystallinity of ZnO was obviously enhanced [14]. According to the above FTIR analysis, it is obvious that the crystallinity of ZnO is more dependent on the SiC buffer layer.…”

Section: Resultsmentioning

confidence: 92%

The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Chen

Zhuge

et al. 2007

Front. Mater. Sci. China

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ZnO/SiC multilayer film has been fabricated on a Si (111) substrate with a silicon carbide (SiC) buffer layer using the RF (radio frequency)-magnetron technique with targets of a ceramic polycrystalline zinc oxide (ZnO) and a composite target of pure C plate with attached Si chips on the surface. The as-deposited films were annealed at a temperature range of 600-1000°C under nitrogen atmosphere. The structure and photoluminescence (PL) properties of the samples were measured using X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy and PL spectrophotometry. By increasing the annealing temperature to 800°C, it is found that all the ZnO peaks have the strongest intensities, and the crystallinity of ZnO is more consistent on the SiC buffer layer. Further increase of the annealing temperature allows the ZnO and SiC layers to penetrate one another, which makes the interface between ZnO and SiC layer become more and more complicated, thus reduces the crystallinities of ZnO and SiC. The PL properties of a ZnO/ SiC multilayer are investigated in detail. It is discovered that the PL intensities of these bands reach their maximum after being annealed at 800°C. The PL peaks shift with an increase in the annealing temperature, which is due to the ZnO and SiC layers penetrating reciprocally. This makes the interface more impacted and complicated, which induces band structure deformation resulting from lattice deformation.

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Section: Resultsmentioning

confidence: 92%

The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate

Chen

Zhuge

et al. 2007

Front. Mater. Sci. China

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“…However, the large lattice misfit and different thermal expansion coefficients limit the growth temperature and lead to polycrystalline layers of granular material. Different groups have reported on different buffer-layer materials on Si(111), using molecular beam epitaxy (MBE) 10 or pulsed laser deposition. 11 Recently, we have demonstrated the coalescence of ZnO grains in low temperature MBE grown, polycrystalline ZnO on Si(111) by thermal annealing under oxygen (O 2 ) atmosphere.…”

Section: Introductionmentioning

confidence: 99%

Structural enhancement of ZnO on SiO2 for photonic applications

Ruth

Meier

2013

AIP Advances

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Multi-layer thin films are often the basis of photonic devices. Zinc oxide (ZnO) with its excellent optoelectronic properties can serve as a high quality emitter in structures like microdisks or photonic crystals. Here, we present a detailed study on the enhancement of the structural properties of low-temperature MBE grown ZnO on silica (SiO2). By thermal annealing a grain coalescence of the initially polycrystalline layer leads to an enhancement of the electronic structure, indicated by a blue shift of the photoluminescence (PL) signal maximum. Oxygen atmosphere during the annealing process prevents the creation of intrinsic defects by out-diffusion. Pre-annealing deposited SiO2 capping layers instead obstruct the recrystallization and lead to less intense emission. While thin capping layers partially detach from the ZnO film at high temperatures and cause higher surface roughness and the weakest emission, thicker layers remain smoother and exhibit a significantly stronger photoluminescence.

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“…It is a promising material for light emitting/detecting or nonlinear optical devices in the ultraviolet (UV) range. ZnO films have been grown on a variety of substrates, such as Al 2 O 3 [2,3], Si [4,5], SCAM [6], SiC [7], GaN [8] and ZnO [9,10]. Among these substrates, Si is a powerful candidate for the advantages of low cost and integration of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%