Heteroepitaxy of Diamond

Ando, Yutaka; Sawabe, Atsuhito

doi:10.1002/9783527623174.ch4

Cited by 3 publications

(1 citation statement)

References 83 publications

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“…Since Ohtsuka et al successfully fabricated heteroepitaxial diamonds on Ir(001)/MgO(001) substrates in 1996, 1) techniques for size enlargement of these substrates have been developed stage by stage. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Recently, the device performance of p þ -i-p þ field-effect transistors fabricated on a heteroepitaxial diamond substrate with 1 inch diameter has been found to be comparable to that of those fabricated on a monocrystal diamond substrate categorized as natural type-IIa. 19) However, a certain film thickness of the diamond with an appropriate textured growth technique is necessary to obtain a high-quality surface of heteroepitaxial diamond because dense defects exist around the boundary between the film and substrate (Ir).…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

Ando¹,

Kamano

Suzuki³

et al. 2012

Jpn. J. Appl. Phys.

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Epitaxial lateral overgrowth (ELO) of diamond on Ir(001)/MgO(001) substrates was demonstrated by using a patterned nucleation and growth method. Epitaxial nucleation areas of fine line shape aligned with various crystal orientations were prepared on an Ir(001) surface before diamond growth. The growth rate of the diamonds in the lateral direction markedly changed depending on both the crystal orientation and the growth conditions. A lateral/vertical growth rate ratio of approximately 4.9 was obtained. The full widths at half maximum of the diamond Raman peak observed at the laterally grown areas were approximately threefold better than that of the vertically grown areas on the nucleation sites.

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Section: Introductionmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

Ando¹,

Kamano

Suzuki³

et al. 2012

Jpn. J. Appl. Phys.

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Diamond Films

Schultrich¹

2018

Tetrahedrally Bonded Amorphous Carbon Films I

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NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

Weippert

Engels

Quellmalz

et al. 2023

Journal of Applied Physics

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For the wafer-scale fabrication of diamond devices, the growth of diamond substrates by heteroepitaxial chemical vapor deposition is the most promising option currently available. However, the transfer of growth and also structuring processes from small homoepitaxial to larger heteroepitaxial samples is not straightforward and requires adaptation. In this study, we present an approach for the fabrication of functional microstructures including pyramids and mesas as well as more complex structures with hollow centers. The associated methods were previously demonstrated by homoepitaxial growth and are now evaluated on heteroepitaxially grown diamond films. After optimizing the growth procedures to ensure a sufficient quality of the bare diamond substrates, precursor structures for overgrowth were fabricated by e-beam lithography and plasma etching. In the overgrowth of nanopillars, a truncated pyramidal shape was achieved. The characterization with scanning electron microscopy revealed the growth of higher-index facets. Nevertheless, photoluminescence spectroscopy reveals localized doping on the sides of the microstructures. In addition, optically detected magnetic resonance reaches a contrast of 6% of one preferred nitrogen vacancy orientation per facet and a transverse relaxation time T2∗ of 96 ns.

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Heteroepitaxy of Diamond

Cited by 3 publications

References 83 publications

Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

Epitaxial Lateral Overgrowth of Diamonds on Iridium by Patterned Nucleation and Growth Method

Diamond Films

NV-doped microstructures with preferential orientation by growth on heteroepitaxial diamond

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