Physics and Applications of CVD Diamond 2008
DOI: 10.1002/9783527623174.ch4
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Heteroepitaxy of Diamond

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Cited by 3 publications
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“…Since Ohtsuka et al successfully fabricated heteroepitaxial diamonds on Ir(001)/MgO(001) substrates in 1996, 1) techniques for size enlargement of these substrates have been developed stage by stage. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Recently, the device performance of p þ -i-p þ field-effect transistors fabricated on a heteroepitaxial diamond substrate with 1 inch diameter has been found to be comparable to that of those fabricated on a monocrystal diamond substrate categorized as natural type-IIa. 19) However, a certain film thickness of the diamond with an appropriate textured growth technique is necessary to obtain a high-quality surface of heteroepitaxial diamond because dense defects exist around the boundary between the film and substrate (Ir).…”
Section: Introductionmentioning
confidence: 99%
“…Since Ohtsuka et al successfully fabricated heteroepitaxial diamonds on Ir(001)/MgO(001) substrates in 1996, 1) techniques for size enlargement of these substrates have been developed stage by stage. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Recently, the device performance of p þ -i-p þ field-effect transistors fabricated on a heteroepitaxial diamond substrate with 1 inch diameter has been found to be comparable to that of those fabricated on a monocrystal diamond substrate categorized as natural type-IIa. 19) However, a certain film thickness of the diamond with an appropriate textured growth technique is necessary to obtain a high-quality surface of heteroepitaxial diamond because dense defects exist around the boundary between the film and substrate (Ir).…”
Section: Introductionmentioning
confidence: 99%