Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: correlations between material and device properties

Zimin, Dmitri; Alchalabi, Karim; Zogg, H.

doi:10.1016/s1386-9477(02)00340-5

Cited by 24 publications

(12 citation statements)

References 12 publications

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“…The radiation from a blackbody source at T = 900 K, chopped with a frequency of 900 Hz, illuminates the detector through the BaF 2 window of the cryostat. The highest values of R 0 A product, measured for the PbTe photodetectors grown on BaF 2 substrates during this work, are close to the values found in the literature for PbTe p − n junction infrared sensor grown on Si substrates [3,4]. It is important to mention that the performance of the best PbTe photodiodes fabricated here with integral detectivity D * of 6 x 10 10 cmHz 1/2 W −1 is comparable to commercial InSb and HgCdTe infrared detectors with cut-off wavelength around 6 µm that show peak detectivity D * (λ p ) in the range of 10 11 cmHz 1/2 W −1 at 77K [7].…”

Section: Detectivity and Spectral Responsesupporting

confidence: 89%

“…The photodiodes are normally made from PbTe layers grown on BaF 2 substrates or on Si substrates using fluoride buffer layers. With device performance comparable to the metal Schottky barriers, PbTe p − n junctions have recently attracted attention as infrared sensors [3][4][5]. It is well known that the electrical characteristics of the p-n junction strongly influence the detector performance.…”

Section: Introductionmentioning

confidence: 99%

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Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

2006

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PbTe mesa diodes were fabricated from a series of p − n junctions grown on BaF 2 substrates. For this series, the hole concentration was kept constant at 10 17 cm −3 and the electron concentration varied between 10 17 and 10 19 cm −3 . Capacitance versus voltage analysis revealed that for n > 10 18 cm −3 , a one-sided abrupt junction is formed. The direct and reverse branches of the current versus voltage curves exhibited different forms among the diodes. The R 0 A product varied between 0.23 and 31.8 Ωcm 2 , and the integral detectivity ranged from 1.1x10 8 to 6.5x10 10 cmHz 1/2 W −1 . The performance of the best PbTe photodiodes fabricated here is comparable to the commercial InSb and HgCdTe infrared detectors, and to the PbTe sensors grown on Si substrate.

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Section: Detectivity and Spectral Responsesupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

2006

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“…From Ref. [65] it is known that a single dislocation threading the p-n junction in PbTe, reduces its resistance by about 1 GV. Therefore, despite of the donor character of indium, it provides also a conducting path to the p-type layer.…”

mentioning

confidence: 99%

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF 2 substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb 0.92 Eu 0.08 Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle g is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.

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“…[2][3][4] Lead telluride p-n junctions have recently attracted attention as infrared detectors. [6][7][8] In this case, an n + ͑high 10 18 cm −3 ͒ layer is grown on top of a p-type ͑ϳ10 17 cm −3 ͒ PbTe layer and mesa structures are etched to delineate the devices. 7,8 Both types of PbTe infrared detectors showed comparable device performance.…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of PbTe p-n junction infrared sensors

Barros

Abramof

Rappl

2006

Journal of Applied Physics

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Lead telluride mesa diodes were fabricated from a series of p-n junctions grown on (111) BaF2 substrates, in which the hole concentration p was kept constant at 1017cm−3 and the electron concentration n varied between 1017 and 1019cm−3. Capacitance-voltage analysis showed that for n>1018cm−3 the PbTe p-n junction is one sided and abrupt. The parameters (incremental resistance, series and parallel resistances, and ideality factor) obtained from the current-voltage (I-V) characteristics and the detectivity D* exhibited a large fluctuation among the photodiodes. In spite of these fluctuations, it was possible to correlate the noise and D* values to the parameters obtained from the I-V analysis. These results allow predicting the PbTe detector’s figures of merit from the data obtained from the I-V curves. The best PbTe photodiodes fabricated here showed D* values close to 1011cmHz1∕2W−1, comparable to InSb and HgCdTe commercial detectors and to PbTe sensors fabricated on Si substrates.

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Heteroepitaxial PbTe-on-Si pn-junction IR-sensors: correlations between material and device properties

Cited by 24 publications

References 12 publications

Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

Lead telluride p-n junctions for infrared detection: electrical and optical characteristics

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Electrical and optical properties of PbTe p-n junction infrared sensors

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