Heteroepitaxial growth of SrO films on Si substrates

Kado, Yuichi; Arita, Yoshinobu

doi:10.1063/1.337957

Cited by 70 publications

(27 citation statements)

References 7 publications

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“…A number of reported attempts to grow oxide structures on silicon have been made [12][13][14][15], but until now there has been no definitive proof that a commensurate crystalline oxide-on-silicon interface could be obtained. While recent years have seen extensive studies of the synthesis of FIG.…”

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confidence: 99%

Crystalline Oxides on Silicon: The First Five Monolayers

1998

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The long-standing problem of growing a commensurate crystalline oxide interface with silicon has been solved. Alkaline earth and perovskite oxides can be grown in perfect registry on the (001) face of silicon, totally avoiding the amorphous silica phase that ordinarily forms when silicon is exposed to an oxygen containing environment. The physics of the heteroepitaxy lies in establishing a sequenced transition that uniquely addresses the thermodynamics of a layer-by-layer energy minimization at the interface. A metal-oxide-semiconductor capacitor using SrTiO 3 as an alternative to SiO 2 yields the extraordinary result of t eq , 10 Å. [S0031-9007(98)07238-X] PACS numbers: 81.15. Hi, 73.40.Qv, 77.55. + f Since the advent of the integrated circuit in 1959 and the introduction of metal-oxide-semiconductor (MOS) capacitors in the early 1960s, electronic technology has relied on silica ͑SiO 2 ͒ as the gate dielectric in a field effect transistor. However, silica-based transistor technology is approaching fundamental limits. Feature-size reduction and the ever-demanding technology roadmaps have imposed scaling constraints on gate oxide thickness to the point where excessive tunneling currents make transistor design untenable; an alternative gate dielectric is needed [1].While now it is especially clear, with SiO 2 thicknesses in the sub-50-Å regime, the argument for alternative gate oxides is not new; it has been made from different perspectives for over 40 years [2][3][4][5]. Quite aside from the "physical" thickness limits that tunneling currents make obvious, the amorphous SiO 2 interface with silicon leaves dangling bonds as electronic defects disrupting translational symmetry at the interface. An alternative crystalline gate oxide would, in principle at least, uniquely maintain a one-to-one correspondence between physical and electrical structure preserving translational symmetry to atomic dimensions.Crystalline oxides on silicon (COS), simply by virtue of their high dielectric constants, could fundamentally change the scaling laws for silicon-based transistor technology. More importantly COS introduces the possibility for an entirely new device physics based on utilization of the anisotropic response of crystalline oxides grown commensurately on a semiconductor. In this Letter, we report that high dielectric constant alkaline earth and perovskite oxides can be grown in perfect registry with silicon. Commensurate heteroepitaxy between the semiconductor and the oxide is established via a sequenced transition that uniquely addresses the thermodynamics of a layer-by-layer energy minimization at the interface. The perfection of the physical structure couples directly to the electrical structure, and we thus obtain the unparalleled result of an equivalent oxide thickness of less than 10 Å in a MOS capacitor.An equivalent oxide thickness t eq can be defined for a MOS capacitor asin which´S iO 2 and´0 are the dielectric constants of silica and the permittivity of free space. ͑C͞A͒ ox is the specific capacitance of the...

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confidence: 99%

Crystalline Oxides on Silicon: The First Five Monolayers

1998

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“…To achieve additional controllability of the thin film transistor (TFT) based on this concept, there have been numerous attempts to include a third carrier suppressor since the use of Ga was reported by Hosono et al [1][2][3][7][8][9][10][11][12]. SrO is a known electrical insulator [13][14][15][16] with a bandgap of 5.7 eV [13], an electronegativity of 0.95, and a dielectric constant of 3.2 [17]. Because Sr satisfies the basic condition of being a carrier suppressor, having a large bandgap and a low electronegativity [1,9], we recommend it as the third component of a solution-processed IZO system.…”

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Investigation of solution-processed amorphous SrInZnO thin film transistors

Yoon¹,

Kim²,

Jeong³

et al. 2011

Journal of Crystal Growth

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“…1,14 On the other hand, the Ru-Si-O system, as has been mentioned already, has a stable tie-line not between RuO 2 and Si but between Ru and SiO 2 at ¾1000 K. This suggests that RuO 2 C Si ) Ru C SiO 2 G°1 000 K ¾ D 595 kJ mol 1 is favourable for all possible reactions in the RuO 2 /Si contact system. 1 Furthermore, this value is more negative than the energy of formation of SrRuO 3 G°1 000 K ¾ D 325 kJ mol 1 at 1000 K. 13 The reduction into elemental Ru by Si at the initial stage of growth is believed to be the most favourable candidate reaction leading to the unstable contact of SrRuO 3 on Si. Based on the structural and chemical information from reaction layers and with the help of thermodynamic calculations we propose the possible reaction thermodynamics for the SrRuO 3 /Si contact system as follows.…”

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“…Although the thermodynamic calculations for SrO in contact with Si could not be completed due to the absence of thermodynamic data for SrSi 2 and Sr 3 SiO 5 , it has been reported that SrO and Si are thermodynamically stable when in contact at temperatures of >1000 K. 1 Furthermore, SrO can be grown epitaxially on an Si substrate of cube-on-cube type. 13 In general, it is known that alkaline earth oxides such as BeO, MgO, CaO, SrO and BaO, in which divalent cations can act as a network modifier in SiO 2 amorphous glass, are stable when in contact with Si. 1,14 On the other hand, the Ru-Si-O system, as has been mentioned already, has a stable tie-line not between RuO 2 and Si but between Ru and SiO 2 at ¾1000 K. This suggests that RuO 2 C Si ) Ru C SiO 2 G°1 000 K ¾ D 595 kJ mol 1 is favourable for all possible reactions in the RuO 2 /Si contact system.…”

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Nanoscale characterization of interfacial reactions in SrRuO₃ thin film on Si substrate

Park

2001

Surface & Interface Analysis

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Interfacial reactions between SrRuO 3 films and Si substrate were investigated by using field-emission transmission electron microscopy (FE-TEM). The compositional and structural variations across the interface were analysed using energy-dispersive x-ray spectroscopy (EDS) and diffraction methods with an electron probe of 0.5 nm diameter. According to the morphology and composition analysed, the reaction layers between Si and SrRuO 3 (from the substrate side) were identified as follows: Sr-Si-O layer; amorphous SiO 2 layer; Sr-Si-O layer; and nanometre-sized Ru-rich grains containing Si and O. The reaction layers and their characteristics could be explained by considering the chemical reactivity of the binary constituent oxides of SrRuO 3 (i.e. SrO and RuO 2 ) with Si substrate: i.e. SrO can be stable in contact with Si because the Sr-Si-O ternary system has a stable tie-line between SrO and Si, but RuO 2 cannot be stable with Si because the Ru-Si-O ternary system has a stable tie-line not between RuO 2 and Si but between Ru and SiO 2 . The reduction of SrRuO 3 to elemental Ru by Si is believed to be the most favourable candidate for the reaction leading to the unstable contact of SrRuO 3 on Si.

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Heteroepitaxial growth of SrO films on Si substrates

Abstract: Articles you may be interested inFabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

Cited by 70 publications

References 7 publications

Crystalline Oxides on Silicon: The First Five Monolayers

Crystalline Oxides on Silicon: The First Five Monolayers

Investigation of solution-processed amorphous SrInZnO thin film transistors

Nanoscale characterization of interfacial reactions in SrRuO₃ thin film on Si substrate

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Heteroepitaxial growth of SrO films on Si substrates

Abstract: Articles you may be interested inFabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

Cited by 70 publications

References 7 publications

Crystalline Oxides on Silicon: The First Five Monolayers

Crystalline Oxides on Silicon: The First Five Monolayers

Investigation of solution-processed amorphous SrInZnO thin film transistors

Nanoscale characterization of interfacial reactions in SrRuO3 thin film on Si substrate

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Nanoscale characterization of interfacial reactions in SrRuO₃ thin film on Si substrate