Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

Abstract

Abstract. High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000qC, 1100qC, 1200qC were studied by Fourier transform-infrared (FTIR) spectroscopy, X-ray diffraction (XRD), Raman spectroscopy, transmission electon microscopy (TEM), transmission electron diffraction (TED), and scanning electron microscopy (SEM). XRD study and HRTEM crosssection revealed that the crystalline SiC film begins to grow on Si (111) substrate at 1000qC. According to the HRTEM cross-section image five planes in 3C-SiC (111) film are aligned with four Si(111) planes at the SiC/Si interface. It was shown the SiC films (35 nm) grown on Si(111) at 1200qC have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm) were formed on Si (100) substrate at the same temperature. It was shown the SiC films (30-35 nm) are able to cover the voids in Si substrate with size up to 10 Pm.