1998
DOI: 10.1103/physrevb.58.16396
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Heteroepitaxial graphite on6HSiC(0001): Interface formation through conduction-band electronic structure

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Cited by 686 publications
(613 citation statements)
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“…Another band has the top of dispersion at ∼5 eV at the point and exhibits a strong downward dispersion toward the K point. The electronic structure of C 6 LiC 6 looks quite similar to that of C 6 X (X = Li, Ca, La, Eu, and Yb), 1,6,8,9,15,[18][19][20] although the weak intensity near the point is not observed in pristine graphene or graphite. In order to see more clearly these dispersive features in the ARPES spectra, we have mapped out the band structure and show the result in Fig.…”
Section: Resultsmentioning
confidence: 75%
See 1 more Smart Citation
“…Another band has the top of dispersion at ∼5 eV at the point and exhibits a strong downward dispersion toward the K point. The electronic structure of C 6 LiC 6 looks quite similar to that of C 6 X (X = Li, Ca, La, Eu, and Yb), 1,6,8,9,15,[18][19][20] although the weak intensity near the point is not observed in pristine graphene or graphite. In order to see more clearly these dispersive features in the ARPES spectra, we have mapped out the band structure and show the result in Fig.…”
Section: Resultsmentioning
confidence: 75%
“…The LEED pattern is quite similar between monolayer and bilayer graphene, and consists of basically three types of spots; (i) the (1×1) spot from the bulk SiC substrate (Si(1×1)), 15 (ii) the weak 6 √ 3×6 √ 3R30 • spot due to the buffer layer, [15][16][17] and (iii) the C(1×1) spot from the honeycomb atomic pattern of graphene. 15,17 We find that the intensity of the C(1×1) spot in bilayer graphene is stronger than that of monolayer counterpart. When we deposit Li atoms onto these graphene films, the LEED patterns show discernible differences between monolayer and bilayer graphene, as shown in Figs.…”
Section: Resultsmentioning
confidence: 99%
“…This approximation has been proved to well describe the electronic properties of epitaxial graphene on SiC 9,11 . More importantly, the √ 3 × √ 3R30 o reconstruction is also been observed in experiments during epitaxial growth of graphene on both (C-terminated) SiC(0001) surface 6,12 and (Si-terminated) SiC(0001) surface [13][14][15] . To address the doping effects in graphene-SiC system, a 2 √ 3 × 2 √ 3R30 o SiC substrate cell, which accommodates a 4 × 4 graphene cell, is constructed.…”
Section: Fig 1: (Color Online)mentioning
confidence: 72%
“…4,147 Transparent graphene thin films can be prepared using a variety of techniques including micromechanical exfoliation, 2 epitaxial growth, 148 chemical VD, 42 and GO reduction at high temperatures. 47,149,150 In particular, TCEs based on rGO can be fabricated via cheap solution-based methods, and their work functions can also be engineered via chemical doping or structural engineering.…”
Section: Solar Cellsmentioning
confidence: 99%