The
development of core–shell structural composites with
specific frequency band absorption properties is a means to effectively
improve the performance and use of wave absorbers. Herein, core–shell
structural MoS2@VO2 composites with semiconductor
heterojunctions were designed by a multistep hydrothermal method using
an interface engineering strategy. After analysis of the material
crystal information, epitaxial element information, microscopic morphology
structure information, and electromagnetic wave parameter information,
the MoS2@VO2 composite has a good chemical bonding
state, and its morphology meets expectations. The prepared MoS2@VO2 composites have various loss pathways for
electromagnetic waves. The MoS2@VO2 composite
achieves a minimum reflection loss of −56.78 dB, and the absorption
band covers the whole X-band. The electromagnetic wave absorption
properties of this material were improved by the construction of semiconductor
heterojunctions, the introduction of a large number of phase interfaces,
and the design of special hollow and core–shell structures.
This work can provide a strategy for the application of semiconductor-based
composite functional materials in the field of electromagnetic wave
absorption.