Heteroatomic stitching of broken WS<sub>2</sub> monolayer with enhanced surface potential

Viswanath, B.; Satô, Yukio; Balakrishnan, Viswanath

doi:10.1039/d2nr06288g

Cited by 5 publications

(1 citation statement)

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“…The emission maximum was located at ∼624.4 nm (1.98 eV), which lies in the visible range and, hence, is very close to the theoretical band gap value (∼2 eV). The observed strong PL indicates that the WS 2 was in the form of a monolayer. − …”

Section: Resultsmentioning

confidence: 96%

Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application

Thakur,

Singh,

Naik

et al. 2024

ACS Appl. Electron. Mater.

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Lithographically patterned carbon microelectrodes, owing to their light weight, excellent thermal stability, chemical inertness, and good electrical conductivity, can be a suitable alternative to metal electrodes commonly employed as contact pads for electrical devices. In the present work, we demonstrate the fabrication of a planar memristor device consisting of monolayer WS 2 integrated with photolithographically patterned glass-like carbon (GC) electrodes. The integration of GC with WS 2 is carried out by chemical vapor deposition (CVD) of WS 2 on the GC electrodes obtained by carbonization of micropatterned phenol-formaldehyde resin (SU8) onto SiO 2 /Si substrates. The fabricated two-terminal memristor devices exhibit bipolar and asymmetric diode-like memristive characteristics, with a high-to-low resistance ratio of approximately 2 orders of magnitude and a high endurance of 400 cycles. The direct integration of two-dimensional (2D) transition metal dichalcogenides (TMDs) with carbon materials in device geometry provides a platform for low-power device fabrication and enables the fabrication of microelectrodes of any desired shape.

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Section: Resultsmentioning

confidence: 96%

Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application

Thakur,

Singh,

Naik

et al. 2024

ACS Appl. Electron. Mater.

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Site-specific optical encryption via nanoscale integration of carbon on monolayer WS2

Thakur,

Kumar,

Barwal

et al. 2023

Carbon

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Ultrafast dynamics of excitons and charge carriers in Van der Waals WS2 nanotubes

Paukov,

Starchenko,

Melnikov

et al. 2024

Materials Today Chemistry

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Heteroatomic stitching of broken WS₂ monolayer with enhanced surface potential

Abstract: The presented work demonstrates the concept of stitching to fill the cracks and voids in monolayer WS2 with MoS2, resulting in the formation of WS2-MoS2 heterostructures that have potential modulation at the junction.

Cited by 5 publications

References 50 publications

Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application

Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application

Site-specific optical encryption via nanoscale integration of carbon on monolayer WS2

Ultrafast dynamics of excitons and charge carriers in Van der Waals WS2 nanotubes

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Heteroatomic stitching of broken WS2 monolayer with enhanced surface potential

Abstract: The presented work demonstrates the concept of stitching to fill the cracks and voids in monolayer WS2 with MoS2, resulting in the formation of WS2-MoS2 heterostructures that have potential modulation at the junction.

Cited by 5 publications

References 50 publications

Direct Integration of Monolayer WS2 with Lithographically Patterned Carbon Contacts for Memristor Application

Direct Integration of Monolayer WS2 with Lithographically Patterned Carbon Contacts for Memristor Application

Site-specific optical encryption via nanoscale integration of carbon on monolayer WS2

Ultrafast dynamics of excitons and charge carriers in Van der Waals WS2 nanotubes

Contact Info

Product

Resources

About

Heteroatomic stitching of broken WS₂ monolayer with enhanced surface potential

Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application

Direct Integration of Monolayer WS₂ with Lithographically Patterned Carbon Contacts for Memristor Application