Heteroatom-Doped Reduced Graphene Oxide Nanosheets for Asymmetric Photo Supercapacitors

Abstract

Graphene based materials have received great attention in energy storage applications such as supercapacitor because of their excellent in surface area, conductivity, and stability. However, their capacitance is limited by surface area in which the energy was stored via reversible ion adsorption at the electrode surface by electrochemical double layer capacitance (EDLC) mechanism. According to the previous studies, heteroatom doping results in a chemical activity changing and enhance electrochemical capacitance. In this work, we demonstrated the effect of boron-doped reduced graphene oxide on electrochemical performance. The electrochemical evaluation was performed in half-cell configuration in 1 M KOH using boron-doped reduced graphene oxide coated on FTO glass as working electrode. The boron-doped reduced graphene oxide shown the specific capacitance up to 370 F g−1 in 1 M KOH at 0.6 A cm-2. In addition, due to their photo active property, boron-doped reduced graphene oxide as an anode was coupled with NixCo3-xO4 as a cathode to investigate the performance of the asymmetric supercapacitor in dark and light conditions. This will be further explored for the development of the photo asymmetric supercapacitor application as a new sustainable energy storage device.