Hetero-epitaxial growth of SiCGe on SiC

TEM characterization of Si films grown on 6H–SiC (0001) C-face

“…It is indicated that the grains have the same face-centered cubic (FCC) structure and same lattice constant, which are consistent with Si. However, the growth orientation of Si grain 1 and 2 is different as [1][2][3][4][5][6][7][8][9][10][11] and [ À1 À 11], respectively. The SAED pattern of grain 2 can coincide with that of grain 1 after a 70.51 clockwise rotation.…”

“…n-type doped 6H-SiC substrates with thickness of about 200 mm are employed to prepare the experimental samples in LPCVD, which was presented in details in our earlier work [7]. The growth temperature in this work is 900 1C.…”

Photoluminescence in SiCGe thin films grown on 6H-SiC

“…The film has a Ge content of 0.21 at% and C content of 62.96 at%. Because the SiC phase is more stable than the SiCGe phase at high temperatures, hence the Ge content decreases in the SiCGe epilayer [3,15].…”

“…This essentially limits its application for detection of visible and infrared light. A promising way to solve this problem is to adopt an SiCGe/SiC heterojunction structure, in which the ternary alloy SiCGe with appropriate composition is used as a light-absorption layer [1][2][3]. At present, the growth of the SiCGe film on SiC is comparatively less studied, only a group from the University of Delaware has published a paper on the application of SiC:Ge alloy in SiC heterostructure bipolar transistors.…”

Structure analysis of SiCGe films grown on SiC

“…In our earlier work, we found that the growth of SiCGe has an island growth aspect, which depends on the growth temperature, growth time and gas flow rates. [5] In this report, we mainly investigate the surface morphology and interior structure of the SiCGe films grown at comparatively high growth temperature.…”