Hetero-epitaxial crystal growth of CdTe on GaAs substrates

Jiang, Quanzhong; Mullins, J.T.; Toman, Jakub; Hase, Thomas P. A.; Cantwell, B.J.; Lloyd, Geoffrey E.; Basu, Arnab; Brinkman, A.W.

doi:10.1016/j.jcrysgro.2007.11.171

Cited by 11 publications

(7 citation statements)

References 17 publications

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“…The (1 1 1) B pits dominate the surface morphology and form growth terraces with (1 01) facets. However, such morphology is different from those reported elsewhere by us, which were prepared by a modified MTPVT method [17]. We believe that an increase in the Te atom population at the growth interface due to the reduction in the source-substrate may have encouraged growth along the (1 1 1) B direction [9] and resulted in changes in surface morphology.…”

Section: Cdte(2 1 1)/gaas(2 1 1) B Substratecontrasting

confidence: 63%

Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

Jiang¹,

Cantwell²,

Mullins³

et al. 2008

Journal of Crystal Growth

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Section: Cdte(2 1 1)/gaas(2 1 1) B Substratecontrasting

confidence: 63%

Close-spaced sublimation growth of homo- and hetero-epitaxial CdTe thick films

Jiang¹,

Cantwell²,

Mullins³

et al. 2008

Journal of Crystal Growth

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“…The fine structures (Fig. 1c) were not observed on the steps of CdTe(211)B/GaAs(211)B layers grown by HWE, 8 where the (111)B facets were flat faces. The reason for this difference has yet to be identified.…”

Section: Resultsmentioning

confidence: 94%

Growth of Thick Epitaxial CdTe Films by Close Space Sublimation

Jiang

Brinkman

Cantwell

et al. 2009

Journal of Elec Materi

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This paper reports on a detailed study of the development of the close space sublimation method, which has been widely used in the preparation of polycrystalline CdTe/CdS solar cells, as an epitaxial method for the growth of thick CdTe single crystal films over 200 lm on GaAs and Ge substrates for highenergy radiation detectors. The resulting microscopic growth phenomena in the process are also discussed in this paper. High-quality single crystalline CdTe thick films were prepared with x-ray rocking curves full width at half maximum (FWHM) values, which were $100 arcsec on Ge substrates and 300 arcsec on GaAs substrates. The quality of thick films on Ge(100) showed a substantial improvement with nucleation in a Te-rich growth environment. No Te inclusions in the CdTe films grown on GaAs(211)B and Ge(100) were observed with IR transmission imaging. Photoluminescence of CdTe/Ge shows a large reduction in the 1.44 eV defect energy bands compared with films grown on GaAs substrates. The film resistivity is on the order of 10 10 X cm, and the film displayed some sensitivity to alpha particles.

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“…Notwithstanding the large lattice mismatch of $14.6%, we have been able to grow large crystals of CdTe on GaAs seed plates and we report here on some of the characteristics of these bulk crystals. A variety of orientations were investigated with various degrees of success, the results of which are reported in another paper at this conference [4], but we have found that the (2 1 1)B orientation has proved to be the best.…”

Section: Introductionmentioning

confidence: 98%