2000
DOI: 10.1016/s0168-583x(99)00659-x
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Helium irradiation effects in single crystals of MgAl2O4

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Cited by 15 publications
(17 citation statements)
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“…3 He ions were implanted at a target temperature of 300 K with a fluence of 10 16 3 He/cm 2 using a 10 keV 3 He þ beam. The beam was scanned to obtain homogeneous implantation and the wafer of 600 lm thickness and of 2 in.…”
Section: Cross-section Measurementsmentioning
confidence: 99%
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“…3 He ions were implanted at a target temperature of 300 K with a fluence of 10 16 3 He/cm 2 using a 10 keV 3 He þ beam. The beam was scanned to obtain homogeneous implantation and the wafer of 600 lm thickness and of 2 in.…”
Section: Cross-section Measurementsmentioning
confidence: 99%
“…Two sintered uranium dioxide disks (0.2 at.% 235 U) have been used to study the potentialities of the This work W. Moller [14] T. W. Bonner [17] J. L. Yarnell [16] A. P. Kluncharev [15] technique of coincidence detection of the emitted products for 3 He profiling in large depth. The mean grain size is 8 lm and the mean O/U ratio is 2.0083 ± 0.0060.…”
Section: Depth Profile Of Helium Implanted In Uo 2 Sintered Pelletsmentioning
confidence: 99%
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