2003
DOI: 10.1016/s0022-3115(03)00212-5
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Helium behavior in UO2 polycrystalline disks

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Cited by 29 publications
(32 citation statements)
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“…• the precipitation of helium in the material structure, according to helium behavior in UO 2 study at a concentration of 1 at.% presented in [23], a Indicates reference sample, as implanted and without annealing. • the effect of defect induced by ions implantation in the material.…”
Section: Thermal Diffusionmentioning
confidence: 99%
“…• the precipitation of helium in the material structure, according to helium behavior in UO 2 study at a concentration of 1 at.% presented in [23], a Indicates reference sample, as implanted and without annealing. • the effect of defect induced by ions implantation in the material.…”
Section: Thermal Diffusionmentioning
confidence: 99%
“…Helium was introduced at the same depth as in the samples of Guilbert et al [3] but the implanted gas concentrations were 2.5 times lower. A depth profile of the implanted distribution is shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The observed craters have a depth nearing 2 µm corresponding to the depth at which the helium concentration peaks (see Fig.1). Finally, flaking effects were also induced by the deuteron microbeam used during the analysis of samples which were implanted with 3 He at a depth of ~1 µm for a maximal 3 He concentration of ~ 0.3 at.% [10,11], as shown in Fig. 5.…”
Section: Resultsmentioning
confidence: 99%
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