2007
DOI: 10.1007/s10909-007-9516-5
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Helium Adsorption on Lithium Substrates

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Cited by 26 publications
(19 citation statements)
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“…Finally, a solid crystalline target offers a means to further reduce the threshold phonon energy required to evaporate helium atoms. 4 He is very weakly bound to the alkali metals, with an adsorption energy ranging from 1.2 meV for lithium [56] to 0.33 meV for cesium [57][58][59]. The binding energy for 3 He is even less, being only 0.17 meV on cesium [60].…”
mentioning
confidence: 99%
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“…Finally, a solid crystalline target offers a means to further reduce the threshold phonon energy required to evaporate helium atoms. 4 He is very weakly bound to the alkali metals, with an adsorption energy ranging from 1.2 meV for lithium [56] to 0.33 meV for cesium [57][58][59]. The binding energy for 3 He is even less, being only 0.17 meV on cesium [60].…”
mentioning
confidence: 99%
“…If a film of Cs no more than a few monolayers thick were deposited on a target crystal, followed by a monolayer of helium, the likely consequence is that energy within the phonon system would be transferred to the surface and lead to helium evaporation. The deposition of the reactive alkalis adds complexity to any low temperature experiment, but it has been successfully demonstrated in a variety of different circumstances [56,60,61].…”
mentioning
confidence: 99%
“…The technology used for depositing films of cesium and rubidium (thermal evaporation from a resistively heated, infrared shielded oven) does not work well for lithium because the required temperatures are too high. We have implemented a pulsed laser deposition (PLD) technique which ablates a lithium target using nanosecond pulses of green light in vacuum at low temperature [45]. A typical isotherm of 4 He on lithium is shown in Fig.…”
Section: Interactions With Superfluiditymentioning
confidence: 99%
“…On lithium, the helium film grows in a continuous way, with the thickness approximately proportional to the pressure. The slope of the linear part of the isotherm can be used to determine the binding energy, which is 13.7 K [45]. At 900 mK, there is a clear KT-type superfluid transition which occurs at a total thickness of approximately Fig.…”
Section: Interactions With Superfluiditymentioning
confidence: 99%
“…The exact value of d c itself, which we find to be on the order of several hundred Angstroms, depends on material characteristics such as band gap, quasiparticle velocity, strain and doping level. Experimental confirmation of these effects would involve the measurement of adsorbed film thickness using standard quartz microbalance [10,51] or interferometry [14] techniques. The ability to electronically or mechanically manipulate free-standing atomically flat substrates opens up the possibility of producing an exotic quantum wetting phase transition driven by a non-thermal control parameter.…”
mentioning
confidence: 99%