Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films

Amaike, H.; Hazu, K.; Sawai, Yoshikazu; Chichibu, S. F.

doi:10.1143/apex.2.105503

Cited by 8 publications

(13 citation statements)

References 29 publications

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“…9 Commencing with these, TiO 2 : Nb films have been deposited by various methods. 19 The dislocation density of the ZnO and MgZnO epilayers was lower than 10 5 cm −2 . However, precise mechanisms for how electrical conductivity emerges in these films are not fully understood at present.…”

Section: Introductionmentioning

confidence: 91%

“…8͒ before Yamada et al introduced the seed layer technique to obtain resistivities as low as 1 ϫ 10 −3 ⍀ cm. Using polycrystalline ZnO and Mg x Zn 1−x O targets, epitaxial growth of single crystalline ZnO and Mg x Zn 1−x O films have also been demonstrated 13,[18][19][20] and the Zn-polar ZnO epilayers exhibited well-aligned 0.26-nm-high monolayer atomic step lines and exciton-polariton fine structures in their low temperature luminescence spectra. 3,8,9 A general consensus for forming A-TiO 2 :Nb TCO films is to deposit films under low O 2 ambient and anneal them in H 2 ͑reducing͒ ambient or in high vacuum.…”

Section: Introductionmentioning

confidence: 99%

“…3,8,9 A general consensus for forming A-TiO 2 :Nb TCO films is to deposit films under low O 2 ambient and anneal them in H 2 ͑reducing͒ ambient or in high vacuum. 19,20 Quite recently, anatase/rutile phase-selective epitaxy of Ti 0.943 Nb 0.057 O 2 films on ͑0001͒ GaN was also demonstrated using the HWPS method. Among many film deposition techniques, sputtering can prepare large-area films of well-controlled compositions economically.…”

Section: Introductionmentioning

confidence: 99%

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Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Fouda¹,

Hazu²,

Haemori³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Electrical and optical properties of Nb-doped TiO 2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO 2 − x ceramic targets J. Vac. Sci. Technol. A 28, 851 (2010); 10.1116/1.3358153 rf magnetron sputter deposition of transparent conducting Nb-doped Ti O 2 films on Sr Ti O 3 Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering A transparent metal: Nb-doped anatase Ti O 2The authors report stoichiometry control and postdeposition annealing-free fabrication of Nb-doped transparent anatase TiO 2 ͑A-TiO 2 :Nb͒ films on alkaline-free glass substrates by helicon-wave-excited-plasma sputtering. The films tended to crystallize in the stable electrically semi-insulating rutile phase. However, although the appropriate deposition condition window was narrow, precise stoichiometry control using near-reducing ambient, namely, the deposition temperature higher than 450°C and O 2 partial pressure ͑P O 2 ͒ in the range between 5 ϫ 10 −4 and 1 ϫ 10 −2 Pa, enabled the deposition of a high refractive index semiconducting anatase phase. The electron concentration of the A-TiO 2 : Nb films increased with increasing Nb concentration up to Ti 0.907 Nb 0.093 O 2 . The results indicate that the Nb 5+ donor on the Ti 4+ site can be activated under near-reducing atmosphere where unwanted compensating defects may be passivated. As a result, anatase Ti 0.907 Nb 0.093 O 2 film deposited at 500°C and P O 2 =5ϫ 10 −4 Pa exhibited a resistivity of 3.4ϫ 10 −3 ⍀ cm and an optical transmittance higher than 90%. The refractive index of A-TiO 2 :Nb was found to be approximately 2.63 at 450 nm with spectroscopic ellipsometry, which is comparable to the InGaN alloys.

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Section: Introductionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Fouda¹,

Hazu²,

Haemori³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…Recently, some strategies were adopted, such as introducing the buffer layer or interlayer, using free-standing substrate or self-standing without substrates, annealing treatment, as well as the optimization of the growth conditions [85,86]. New deposition technique such as high-target utilization sputtering (HiTUS) has also been developed to could exhibit a smooth surface morphology with 0.26-nm-high monolayer atomic steps [87]. In addition, good stoichiometric ratio, low defects, and ties.…”

Section: Crystalline Characteristicsmentioning

confidence: 99%

Zno Thin Films and Nanostructures for Acoustic Wave-Based Microfluidic and Sensing Applications

Peng¹,

Luo²,

Fu³

2018

Functional Materials and Electronics

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Progress in ZnO thin films and nanostructures for the acoustic wave microfluidic and sensing applications are reviewed in this chapter. ZnO thin films with good piezoelectric properties possess large electromechanical coupling coefficients and can be fabricated for the surface acoustic wave (SAW) and film-bulk acoustic resonator (FBAR) devices with a good acoustic performance. The SAWs can be excited to mix, stream, pump, eject, and atomize the liquid, and precision sensing can be performed using SAWs and FBARs. Therefore, the ZnO SAW devices are attractive to be integrated into a labon-chip system where the SAWs can transport bio-fluids to the desired area, mix the extracted DNA or proteins, and detect the changes of the signals using SAWs or FBARs. The ZnO SAW and FBAR devices in combination with different sensing layers could also be used to successfully detect gas, UV light, and biochemicals with remarkable sensitivities. 5.1 INTRODUCTION Zinc oxide (ZnO) is a binary compound via a covalent bonding between the transition-metal zinc atom and oxygen atom. ZnO thin films and nanostructures are multifunctional materials, which have attracted much attention from as early as 1930s until today due to various fundamental electronic, years, the development of new growth technologies of ZnO thin films and nanostructures and their new applications has renewed lots of interest on investigation of their growth mechanism, band structures, excitons, and deep centers in luminescence, nonlinear optics, and UV lasing [8,9]. With in-depth understanding of the semiconducting, optical, electronic, piezoelectric, and pyroelectric properties, ZnO has now been widely applied for microfluidics, These immense applications also have boosted the extensive researches on the fundamentals and growth techniques of the ZnO-based materials. typically at micron and submicron dimensions in a miniaturized system and the corresponding technologies for such systems. This multidisciplinary technology is comprehensively based on physics, nanotechnology, biotech-ZnO Thin Films and Nanostructures for Acoustic 197 the developments of the inkjet print-heads, DNA chips, and lab-on-a-chip is conveniently handled through generating, transporting, separating, consumption, high-throughput, compactness, high sensitivity, fast response, at microscale has been supported with the urgent needs from healthcare, medical research, life science, drug-development sectors. However, the and phenomena become dominant at a microscale level, such as capillary forces, surface roughness and undesired chemical interactions. These may be

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“…Because the HWP can be excited in relatively high vacuum and is used as a remote plasma source, the surface-damage-free nature of the HWP sputtering technique enabled the depositions of smooth ZnO:Al films [10] without post-deposition annealing and high reflectivity dielectric distributed Bragg reflectors [13]. Recently, the helicon-wave-excited-plasma sputtering epitaxy (HWPSE) method [11] also enabled the epitaxial growth of low dislocation density ZnO films, which exhibited well-aligned 0.26-nm-high monolayer atomic surface step lines and well-resolved excitonic polariton photoluminescence peaks [14].…”

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confidence: 99%

Helicon‐wave‐excited plasma sputtering epitaxy of Nb‐doped TiO₂ films on GaN

Fouda

Hazu

Nakayama

et al. 2010

Phys. Status Solidi (c)

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Rutile‐ and anatase‐phase Nb‐doped TiO2 (TiO2:Nb) epilayers were selectively grown on a GaN template by the helicon‐wave‐excited‐plasma sputtering epitaxy (HWPSE) method. The rutile (100) TiO2:Nb films grew on the etched clean (0001) GaN surface with the in‐plane epitaxial relationship [010] TiO2 // [10‐10] GaN, regardless of growth temperature. While, the anatase (001) TiO2:Nb films grew on appropriately oxidized (0001) GaN with the in‐plane relations [110] TiO2 // [10‐10] GaN (and [110] TiO2 // [11‐20] GaN) under high temperature and low oxygen partial pressure conditions. The lowest resistivity of the heterostructure was 3×10‐4 Ω·cm. The selective growth of anatase films is assigned as being due to the formation of a sheet of Ga‐O layer, possibly (001) or (100) orientation β‐Ga2O3, on the GaN surface. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films

Cited by 8 publications

References 29 publications

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Zno Thin Films and Nanostructures for Acoustic Wave-Based Microfluidic and Sensing Applications

Helicon‐wave‐excited plasma sputtering epitaxy of Nb‐doped TiO₂ films on GaN

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Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films

Cited by 8 publications

References 29 publications

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Zno Thin Films and Nanostructures for Acoustic Wave-Based Microfluidic and Sensing Applications

Helicon‐wave‐excited plasma sputtering epitaxy of Nb‐doped TiO2 films on GaN

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Helicon‐wave‐excited plasma sputtering epitaxy of Nb‐doped TiO₂ films on GaN