Helical surface-density waves and the oscillistor effect in the electron-hole-plasma of n-germanium

Lautz, Günter; Schulz, Michael

doi:10.1016/0038-1101(68)90027-0

Cited by 7 publications

(3 citation statements)

References 12 publications

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“…The measurements were performed in a similar manner as described by Hurwitz and McWhorther [2] and by Schulz and Lautz [5]. To avoid thermal heating of the crystal pulse techniques were applied.…”

Section: Methodsmentioning

confidence: 99%

“…1. The injection level was calculated from thenonlinear U-I characteristics as by Lautz and Schulz [5] assuming pe = ph [7]. Recombination lifetime measurements in a longitudinal magnetic field on cylindrical samples [8] revealed the surface recombination to be about 3 x lo3 and lo3 cm/s, respectively, depending on whether the sample was etched in CP4 or in H,O, etch (10%).…”

Section: Curren-voltage Characteristics Injection Levelmentioning

confidence: 99%

“…ages are equally amplified for both magnetic field polarities. Since in cylindrical samples [5] the phase shift and correspondingly the real part of the wave number k, is approximately proportional to the frequency, k, may be approximated by k, = 2nf/v, [2]. vD is the ambipolar velocity which is proportional to the electric field strength and the ambipolar drift mobility.…”

Section: _ _mentioning

confidence: 99%

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The influence of carrier injection on helical density waves

Weber¹

1976

Phys. Stat. Sol. (a)

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In an injected plasma of a germanium crystal at 77 K the helical density waves setting in spontaneously or excited externally are investigated. The present work deals with externally excited density waves and compares the experimental results with the theory for a surface density wave. The composition of the plasma is influenced by changing the surface recombination rate, by a lateral p‐n junction, and by lateral illumination. This results in certain optimization demands for the amplification of the density waves. With regard to the problem of the current oscillations which are observed in the presence of helical density waves, an equivalent circuit is given which takes into account the resistance modulations by asymmetries of the density wave running out, and thus allows a better interpretation of the measured results.

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Section: Methodsmentioning

confidence: 99%

Section: Curren-voltage Characteristics Injection Levelmentioning

confidence: 99%

Section: _ _mentioning

confidence: 99%

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The influence of carrier injection on helical density waves

Weber¹

1976

Phys. Stat. Sol. (a)

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On the dispersion relation for surface density waves in semiconductors

Weber

1976

Phys. Stat. Sol. (a)

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The theory of the helical surface-density wave in an injected semiconductor plasma is extended with regard to existing model calculations by omitting the restrictions on the magnitude of surface recombination velocity and magnetic induction for the case of germanium at 77 K. I n the following discussion i t is investigated how the parameters a8 magnetic and electric field, injection level, surface recombination, and sample radius influence the growth rate of helical density waves.Die Theorie der Oberfliichendichtewellen mit Schraubenstruktur in einem injizierten Halbleiterplasma wird gegenuber bisherigen Modellrechnnngen durch den Verzicht auf Beschriinkungen in der GroDe der Oberflachenrekombinationsgeschwindigkeit und im Betrag der magnetischen Induktion fur den Fall des Germanium5 bei 77 K erweitert. In der anschlieBenden Diskussion wird untersucht, wie die Parameter magnetisches und elektrisches Feld, Injektionsniveau, Oberflachenrekombination und Probenradius die Verstiirkung schraubenformiger Dichtewellen beeinflussen.

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