Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Pellish, Jonathan A.; Reed, Robert A.; McMorrow, D.; Vizkelethy, György; Cavrois, V.F.; Baggio, J.; Paillet, Philippe; Duhamel, Olivier; Moen, Kurt A.; Phillips, S.D.; Diestelhorst, R.M.; Cressler, John D.; Sutton, A.K.; Raman, Ashok; Turowski, Marek; Dodd, P.E.; Alles, Michael L.; Schrimpf, R.D.; Marshall, P.W.; LaBel, Kenneth A.

doi:10.1109/tns.2009.2034158

Cited by 36 publications

(9 citation statements)

References 32 publications

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“…The total collected charge is determined by numerically integrating the signal waveform captured by the oscilloscope over time. Similar setups have been used in similar work [1,36,41,42] to capture radiation-induced transient response of devices. The microstrip transmission lines are impedance-matched to the rest of the system (50 Ω characteristic impedance), and are characterized by <1 dB loss at frequencies up to 30 GHz.…”

Section: Iii2 Pulse Capture Setupmentioning

confidence: 99%

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Samsel

Zhang

Hooten

et al. 2013

IEEE Trans. Nucl. Sci.

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Section: Iii2 Pulse Capture Setupmentioning

confidence: 99%

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Samsel

Zhang

Hooten

et al. 2013

IEEE Trans. Nucl. Sci.

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“…The 20 GHz analog bandwidth corresponds to 50 ps. Parasitic components present in the measurement set up have been demonstrated to significantly modulate the shape of the recorded transient [20], [21]. Current transients with FWHM as small as 2 ps were simulated in SOI FinFETs by Turowski et al [22].…”

Section: B Bulk Vs Soi Finfetsmentioning

confidence: 99%

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

El-Mamouni

Zhang

Ball

et al. 2012

IEEE Trans. Nucl. Sci.

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Measured heavy-ion induced current transients are compared for two different junction contact schemes (dumbbell and saddle) in bulk FinFETs. Devices with saddle contacts collect 17% less charge than their counterparts with dumbbell contacts. Transient shunt effects are observed in both bulk and SOI FinFETs with saddle contacts. SOI FinFETs with saddle contacts collect twice as much charge as that generated in the fin. The substrate bias has a large effect on the SOI devices, with the maximum amounts of charge collected when the substrate is negatively biased. Index Terms-Bulk FinFET, charge collection, dumbbell contact, ion-beam-induced-charge-collection (IBICC), saddle contact, shunt effect, single event transient (SET), SOI FinFET, transiention-beam-induced-charge-collection (TRIBICC).

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“…Abundant selections of aperture configurations are also available ranging from 10 to 250 microns slit widths. Additionally, all the Milli-Beam components have been designed to withstand operation in a vacuum [6].…”

Section: Description Of the Milli-beam Systemmentioning

confidence: 99%

An automated approach to isolate dominant SER susceptibilities in microcircuits

Castillo

Mavis

Eaton

et al. 2011

2011 International Reliability Physics Symposium

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With the ever decreasing feature sizes of modern integrated circuits (IC), new test and analysis approaches are needed to isolate dominant soft error rate (SER) susceptibilities. A new test capability which provides SER raster scanning of microcircuits with a collimated heavy-ion beam, having spatial isolation as small as 10 microns, is presented. The system termed the Milli-Beam TM provides, through post processing, three-dimensional surface plots showing the location of error counts over an entire IC. A new cross section measurement technique that accounts for beam variations and uncertainties independent of laboratory dosimetry is also presented.

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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Cited by 36 publications

References 32 publications

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

An automated approach to isolate dominant SER susceptibilities in microcircuits

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