Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits

Abstract

Index Terms-Ground testing, modeling, SiGe, silicon germanium, single event effect, single event upset.

Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs

“…The angles used for simulation correspond to the angles used in broadbeam testing [13][14][15]. The "Effective LET" from Fig.…”

“…• A patterned subcollector (n for npn, p for pnp) on a doped substrate SiGe HBTs have been found to be quite tolerant to total ionizing dose (the amount of trapped charge accumulated over time found typically in the oxides and oxide interfaces of the device) and displacement effects (the result of lattice defects typically attributed to non-ionizing nuclear scattering reactions) [5][6][7][8][9][10][11], but are vulnerable to SEU [12][13][14][15][16]. [16].…”

“…The DTI also limits how much charge can be collected, as diffusive collection is a emitter, base, substrate and collector were each connected to separate probes (four probe IBICC technique [15]) and the induced charge generated by the ion strike was measured for each terminal. The emitter, base, and collector were all biased at 0V, while the substrate was biased at -5.2 V.…”

“…SiGe HBTs have also been shown to be resistant to various types of ionizing radiation effects, making them a compelling candidates for space applications [4 -11]. Unfortunately, this technology is susceptible to SEU as seen, for example, in [12][13][14][15][16]. Space applications employing these circuits will require detailed analysis of the SEU susceptibility.…”

Applications of heavy ion microprobe for single event effects analysis

“…Previous investigations have examined the SEE response of 5HP and 7HP HBT circuits through both circuit testing [4,5] and modeling [6]. Charge collection modeling and measurement [7] studies in the 5HP process have also been conducted.…”