Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Furuhata, Naoki; Kakimoto, Koichi; Yoshida, Masamichi; Kamejima, Taibun

doi:10.1063/1.341253

Cited by 26 publications

(7 citation statements)

References 17 publications

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“…When using pure DTBSi (100 %), the electron concentration decreases down to 7.4×10 18 cm −3 . We attribute this drop to the self-compensation caused by the formation of Si V complexes [23] or even Si due to its amphoteric character [1]. Finally, as pointed out in the experimental section, we stress here the necessity of using an elevated temperature for the DTBSi cell in order to achieve a high doping efficiency.…”

Section: Gaas Doping Using H 2 -Diluted Dtbsimentioning

confidence: 68%

“…These values are comparable to those reported in Refs. [1,8,26,27] for GaAs layers doped with Si using different precursors including DTBSi. We thus conclude that the dilution of DTBSi in H 2 for the n-type doping of GaAs has no impact on the electron mobility.…”

Section: Gaas Doping Using H 2 -Diluted Dtbsimentioning

confidence: 99%

“…In the particular case of III-As compound semiconductors, two of the most commonly used elements for n-and p-type doping are Si and C, respectively. These two elements are quite often preferred over other alternatives because of both their comparatively low diffusion coefficients, which facilitate the fabrication of junctions with abrupt doping profiles [1,2], and their high solubility limits [3,4].…”

Section: Introductionmentioning

confidence: 99%

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H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Saddik,

Braña,

López

et al. 2021

Preprint

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A wide range of n-and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H 2 -diluted DTBSi and CBr 4 as gas precursors for Si and C. We show that the doping level can be varied by modifying either the concentration or the flux of the diluted precursor. Specifically, we demonstrate carrier concentrations of 6 × 10 17 -1.2 × 10 19 cm −3 for Si, and 9 × 10 16 -3.7 × 10 20 cm −3 for C, as determined by Hall effect measurements. The incorporation of Si and C as a function of the flux of the corresponding diluted precursor is found to follow, respectively, a first and a fourth order power law. The dependence of the electron and hole mobility values on the carrier concentration as well as the analysis of the layers by low-temperature (12 K) photoluminescence spectroscopy indicate that the use of H 2 for diluting DTBSi or CBr 4 has no effect on the electrical and optical properties of GaAs.

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Section: Gaas Doping Using H 2 -Diluted Dtbsimentioning

confidence: 68%

Section: Gaas Doping Using H 2 -Diluted Dtbsimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Saddik,

Braña,

López

et al. 2021

Preprint

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“…Investigations carried out on Sidoping of GaAs showed that the dissociation of SiH 4 strongly increases in the range between 690°C and 770°C and thus a higher incorporation of Si into the lattice is expected at higher temperatures. 7,8 This could explain the existence of the band-tails in sample D. In addition the samples A through D show a decreasing blue-shift of the peak with increasing excitation indicating a better screening of the piezoelectric field F PE in the higher doped samples (compare solid and dotted curves in Fig. 1).…”

Section: Growth Of Samplesmentioning

confidence: 87%

Characterization of undoped and silicon-doped InGaN/GaN single quantum wells

Schineller

Lim

Yablonskii

et al. 2000

Journal of Elec Materi

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“…, the generation of a compensating center related to the incorporation of carbon [Chichibu92], the formation of complexes or precipitates [Furuhata88],…”

Section: Heavily Si-doped Gaas Growthmentioning

confidence: 99%

Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).

Vara¹

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This Thesis deals with the development of the monolithic GaInP/GaAs dual-junction solar cell for high concentration applications, including its theoretical analysis and modeling, and the experimental manufacture and characterization of the needed semiconductor structures grown by metal-organic vapour phase epitaxy (MOVPE), and of the final concentrator solar cell devices. A special emphasis is put on the optimization of the solar cell concentration response, as the most important distinctive characteristic when compared to other GaInP/GaAs dual-junction solar cells developed in other laboratories.In the first part of this Thesis, a theoretical study of the concentrator GaInP/GaAs dualjunction solar cell is presented. The efficiency limit of different configurations of this solar cell, and the intrinsic model of the monolithic, series connected approach are analyzed. The extrinsic properties and distributed effects exhibited by this kind of devices are then studied by using quasi-3D models based on distributed circuit units. The optimum front grid layout for the operation of our GaInP/GaAs dual-junction solar cell under high concentrations is designed, and the effect of non-uniform light profiles is appraised.The second part begins with an introduction to the experimental research carried out in this Thesis, in which the MOVPE technology available at I.E.S. -U.P.M. is described. A review of the semiconductor material and solar cell device characterization techniques used is also presented, emphasizing on the issues specific to the dual-junction solar cell devices.The experimental development of the GaInP top cell, the tunnel junction and the complete dual-junction solar cell is then dealt with. As for the GaInP top cell, the MOVPE growth of the GaInP and Al(Ga)InP materials is first tackled. These materials are then used to build the semiconductor structure of the GaInP solar cell, paying an special attention to the front and back surface passivation. As for the tunnel junction, the material research conducted to obtain very high doping levels in GaAs and AlGaAs is firstly treated. Then the experimental work concerning the study of the main tunnel junction semiconductor structure approaches developed in this Thesis is presented. Both the performance of the tunnel junction devices fabricated and the influence of their MOVPE growth on the growth and quality of the GaInP top cell is assessed in each case. A record peak current density of 10100 A/cm 2 and a series resistance at zero bias as low as 1.6•10 -5 Ω•cm 2 are achieved with a AlGaAs/GaAs tunnel junction doped with carbon and tellurium.In the last chapter of this part, the most representative dual-junction solar cell designs developed in this Thesis are explained and analyzed by means of quantum efficiency, I-V curves and concentration response measurements. The weaknesses of each design are iv assessed experimentally and theoretically in order to determine the modifications required to improve the performance of the solar cell. An efficiency of 32.6 % at 1000 ...

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Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Cited by 26 publications

References 17 publications

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

H$_{2}$-diluted precursors for GaAs doping in chemical beam epitaxy

Characterization of undoped and silicon-doped InGaN/GaN single quantum wells

Desarrollo de células solares de doble unión de GaInP/GaAs para concentraciones luminosas elevadas (Development of GaInP/GaAs dual-junction solar cells for high light concentrations).

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