Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

Heera, V.; Mücklich, A.; Posselt, M.; Voelskow, M.; Wündisch, C.; Schmidt, Bertram; Skrotzki, R.; Heinig, K. H.; Herrmannsdörfer, T.; Skorupa, W.

doi:10.1063/1.3309835

Cited by 44 publications

(35 citation statements)

References 21 publications

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“…The high amount of Ga and intermixed atoms from the SiO 2 capping most probably act as nucleation spots for a catalyzed crystallization which prevents a full epitaxial regrowth. The latter has been observed for an implantation dose of 0.6·10 16 cm -2 [20]. Remarkably, the Ga distribution did not change significantly during FLA (Fig.…”

Section: Crystal Structure and The Normal Statementioning

confidence: 55%

“…Gallium -adjacent to germanium in the periodic table of elements -is a better choice. Because of its similar covalent radius it allows for the highest charge-carrier activation in germanium among all possible elements [20]. Thus, the solubility limit of gallium in germanium (4.9·10 20 cm -3 ) is almost two orders of magnitude larger than reported for boron (5.5·10 18 cm -3 ) [21].…”

Section: Preparation Methodsmentioning

confidence: 77%

“…An estimate of the thermal evolution and distribution during FLA -sensitively depending on the optical and thermal properties of the sample -is given in Ref. 20. Finally, the samples were etched in fluoric acid to remove the SiO 2 cover which is necessary for electrical transport measurements.…”

Section: Measurement Techniquementioning

confidence: 99%

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The impact of heavy Ga doping on superconductivity in germanium

Skrotzki

Herrmannsdörfer

Heera

et al. 2011

Low Temperature Physics

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We report new experimental results on how superconductivity in gallium-doped germanium (Ge:Ga) is influenced by hole concentration and microstructure. Ion implantation and subsequent flash-lamp annealing at various temperatures have been utilized to prepare highly p-doped thin films consisting of nanocrystalline and epitaxially grown sublayers with Ga-peak concentrations of up to 8 at.%. Successive structural investigations were carried out by means of Rutherford-backscattering spectrometry in combination with ion channelling, secondaryion-mass spectrometry, and high-resolution cross-sectional transmission electron microscopy. Hole densities of 1.8·10 20 to 5.3·10 20 cm -3 (0.4 to 1.2 at.%) were estimated via Hall-effect measurements revealing that only a fraction of the incorporated gallium has been activated electrically to generate free charge carriers. The coincidence of a sufficiently high hole and Ga concentration is required for the formation of a superconducting condensate. Our data reflect a critical hole concentration of around 0.4 at.%. Higher concentrations lead to an increase of T c from 0.24 to 0.43 K as characterized by electrical-transport measurements. A short mean-free path indicates superconductivity in the dirty limit. In addition, small critical-current densities of max. 20 kA/m 2 point to a large impact of the microstructure.PACS: 74.10.+v Occurrence, potential candidates; 74.78.-w Superconducting films and low-dimensional structures.

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Section: Crystal Structure and The Normal Statementioning

confidence: 55%

Section: Preparation Methodsmentioning

confidence: 77%

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The impact of heavy Ga doping on superconductivity in germanium

Skrotzki

Herrmannsdörfer

Heera

et al. 2011

Low Temperature Physics

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“…Intense structural investigations of the su- * corresponding author; e-mail: jan.fiedler@hzdr.de perconducting layers clearly exclude Ga clusters with a size of more than 3 nm [12]. As Ga itself is a superconducting element with various superconducting phases showing critical temperatures between 1 K and 12 K [17], the question has to be addressed, how superconducting precipitates inuence the low temperature transport properties.…”

mentioning

confidence: 99%

“…Increasing carrier densities are often limited by the equilibrium solid solubility and therefore, dopant precipitation has to be prevented [9,10]. This threshold can be overcome by using nonequilibrium doping techniques like gas immersion laser doping [4,11] or ion implantation with subsequent short-term annealing [12]. The rst was used to fabricate superconducting B doped Si with critical temperatures of 0.6 K [11,13].…”

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confidence: 99%

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

et al. 2013

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Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO2/Si and SiO2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 67 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are dierent.

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Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range

Koch

Mei

Hafermann

et al. 2022

Advanced Photonics Research

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Heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post‐implantation laser annealing is demonstrated. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser‐annealing process enables dopant activation close to or beyond the solid‐solubility limit of Ga in ZnO. Heavily doped ZnO:Ga with free‐carrier concentrations of ≈1021 cm−3, resulting in a plasma wavelength of 1.02 μm, which is substantially shorter than the telecommunication wavelength of 1.55 μm is demonstrated. Thus, this approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 μm, thus, providing a promising plasmonic material for applications in this regime.

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Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

Abstract: P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation J.

Cited by 44 publications

References 21 publications

The impact of heavy Ga doping on superconductivity in germanium

The impact of heavy Ga doping on superconductivity in germanium

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range

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