Heating of optical elements made of high-purity quartz glasses by radiation from powerful fiber laser

Nosov, P. A.; Shirankov, A. F.; Tretyakov, R. S.; Grigoryants, A. G.; Stavertiy, A. Ya.

doi:10.17586/0021-3454-2016-59-12-1028-1033

“…In certain cases, high optical characteristics of DOEs (e.g., wavefront stability) are required; relatively massive substrates are then needed to fabricate such elements [12,13]. However, the influence of dimensional parameters of substrates on matching of a high-frequency generator (HFG) with the lower electrode is neglected in current models.…”

Section: Introductionmentioning

confidence: 99%

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

Poletayev

¹

,

Lyubimov²

2022

Semiconductors

0

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The effect of the degree of asymmetry in the arrangement of metal masks on the matching of the lower electrode with a high-frequency displacement generator during selective reactive-ion etching of massive substrates in plasma-forming gas mixtures based on freon-14 is studied theoretically and experimentally. Theoretically, the absence of the influence of the asymmetry of the mask location on the specific reactive power is shown. It is shown that at the edge of the substrate, especially with a mask, there is a sharp increase in the RF current density, which proves mainly the surface (end) nature of its flow. The influence of the mask location on the behavior of the electric charge density, which correlates with the distribution of the RF current density in the near-surface layer of the substrate, is established. No redistribution of the charge density of the chemically active plasma particles at the edge of the mask was detected. In accordance with the theoretical results obtained, it is experimentally shown that metal masks with a side length ratio of 36/0 mm reduce the power reflection coefficient within 5%. Keywords: diffractive optical element, reactive ion etching, inductively coupled plasma, contact mask, lower electrode, simulation Multiphysics.

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“…В ряде случаев необходимо обеспечить высокие оптические характеристики ДОЭ, например постоянство волнового фронта, и тогда для их изготовления должны использоваться относительно массивные подложки [12,13]. Однако существующие модели не рассматривают влияние габаритных характеристик подложек на согласование генератора высокой частоты (ГВЧ) с нижним электродом.…”

Section: Introductionunclassified

Влияние Асимметрии Расположения Металлических Масок На Согласование Нижнего Электрода С Высокочастотным Генератором Смещения При Реактивно-Ионном Травлении Массивных Подложек

Полетаев¹,

Любимов²

2021

Физика И Техника Полупроводников

0

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The effect of the degree of asymmetry in the arrangement of metal masks on the matching of the lower electrode with a high-frequency displacement generator during selective reactive-ion etching of massive substrates in plasma-forming gas mixtures based on freon-14 is studied theoretically and experimentally. Theoretically, the absence of the influence of the asymmetry of the mask location on the specific reactive power is shown. It is shown that at the edge of the substrate, especially with a mask, there is a sharp increase in the RF current density, which proves mainly the surface (end) nature of its flow. The influence of the mask location on the behavior of the electric charge density, which correlates with the distribution of the RF current density in the near-surface layer of the substrate, is established. No redistribution of the charge density of the chemically active plasma particles at the edge of the mask was detected. In accordance with the theoretical results obtained, it is experimentally shown that metal masks with a side length ratio of 36/0 mm reduce the power reflection coefficient within 5%.

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