Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study

Ek-Weis, Johan; Costa, Staël de Alvarenga Pereira; Frank, Otakar; Kalbáč, Martin

doi:10.1021/jz402681n

Cited by 34 publications

(38 citation statements)

References 25 publications

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“…An efficient approach seems to be to analyse the fluorinated graphene during heat treatment. Recently, we studied the effect of heating fluorinated monolayer and fluorinated bilayer graphene on SiO 2 /Si substrate in a flow of He gas using in situ Raman spectroscopy . It was shown that most of the fluorine atoms bonded to graphene can be removed at mild temperatures, but some fluorine can still be traced even upon heating at 800 K .…”

Section: Introductionmentioning

confidence: 99%

Decomposition of Fluorinated Graphene under Heat Treatment

Plšek

Drogowska

Valeš

et al. 2016

Chemistry A European J

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Fluorination modifies the electronic properties of graphene, and thus it can be used to provide material with on-demand properties. However, the thermal stability of fluorinated graphene is crucial for any application in electronic devices. Herein, X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption (TPD), and Raman spectroscopy were used to address the impact of the thermal treatment on fluorinated graphene. The annealing, at up to 700 K, caused gradual loss of fluorine and carbon, as was demonstrated by XPS. This loss was associated with broad desorption of CO and HF species, as monitored by TPD. The minor single desorption peak of CF species at 670 K is suggested to rationalize defect formation in the fluorinated graphene layer during the heating. However, fluorine removal from graphene was not complete, as some fraction of strongly bonded fluorine can persist despite heating to 1000 K. The role of intercalated H2 O and OH species in the defluorination process is emphasised.

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Section: Introductionmentioning

confidence: 99%

Decomposition of Fluorinated Graphene under Heat Treatment

Plšek

Drogowska

Valeš

et al. 2016

Chemistry A European J

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“…Most of the studies found in the literature have used Raman spectroscopy due to its non-destructibility and high sensitivity to various parameters of the materials, such as doping [13][14][15], strain [16,17], and thermal heating properties [18,19].…”

Section: Introductionmentioning

confidence: 99%

Temperature and face dependent copper–graphene interactions

Costa

Weis

Frank

et al. 2015

Carbon

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A B S T R A C TThe interaction between graphene and metals represents an important issue for the largearea preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and manipulating the level of interaction between graphene and copper single crystals through heat treatment, at temperatures from 298 K to 1073 K. We performed in-situ Raman spectroscopy showing Cu face-specific behavior of the overlying graphene during the heat treatment. On Cu (1 1 1) the interaction is consistent with theoretical predictions and remains stable, whereas on Cu(1 0 0) and Cu (1 1 0), the initially very weak interaction and charge transfer can be tuned by heating. Our results also suggest that graphene grown on Cu(1 0 0) and Cu(1 1 0) is detached from the copper substrate, thereby possibly enabling an easier graphene transfer process as compared to Cu(1 1 1).

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“…The graphene was grown on copper by chemical vapor deposition (CVD) and transferred to SiO 2 /Si substrates, as described previously, [30,31] and the samples were fluorinated using XeF 2 . A description of the graphene growth, transfer, and functionalization is provided in the Supporting Information together with details of the Raman mapping and X-ray photoelectron spectra.…”

Section: Methodsmentioning

confidence: 99%

Fluorination of Isotopically Labeled Turbostratic and Bernal Stacked Bilayer Graphene

Weis

Costa

Frank

et al. 2014

Chemistry A European J

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Fluorination of graphene opens up a bandgap, which creates opportunities for optoelectronics, and also paves the way for the creation of extremely thin insulating layers, which can be important for applications in devices. However, in spite of many interesting features offered by, for example, unequally doped layers in multilayered systems, most of the work has concerned the fluorination of graphene monolayers. Here, the fluorination process of graphene bilayers is investigated through high-resolution Raman mapping followed by analysis of more than 10,000 spectra of bilayer graphene. Isotopically labeled bilayers are used, allowing each individual layer in bilayer graphene to be addressed unambiguously. The fluorinated graphene is prepared through exposure to XeF2. Monolayer graphene is found to be significantly more sensitive to fluorination than bilayer graphene. Through comparison of the D/G area ratio and the position of the G band for turbostratic and Bernal stacked (AB) bilayers, it is found that the fluorination process is more effective for turbostratic than for AB-stacked bilayer graphene. The fluorination changes the electronic structure similarly for the top and bottom layers in turbostratic bilayers. However, the top layer is more sensitive than the bottom layer in AB-stacked bilayers.

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Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study

Cited by 34 publications

References 25 publications

Decomposition of Fluorinated Graphene under Heat Treatment

Decomposition of Fluorinated Graphene under Heat Treatment

Temperature and face dependent copper–graphene interactions

Fluorination of Isotopically Labeled Turbostratic and Bernal Stacked Bilayer Graphene

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