Heat treatments of InP wafers

Hirano, R.; Kanazawa, Takafumi

doi:10.1016/0022-0248(90)90026-h

Cited by 16 publications

(4 citation statements)

References 9 publications

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“…Hofmann et al 3 have been the first to get real semiinsulating state for InP ͑Ͼ10 7 ⍀ cm͒ by annealing under phosphorus ambiance. This has been reproduced in Japan by Kainosho et al 4 and then has given place to several studies [5][6][7][8][9][10][11] to understand the physical phenomena involved in the compensation mechanism. At present time a general model 11 assumes that an annihilation of intrinsic defects related to donors occurs due to the annealing in phosphorus ambiance.…”

mentioning

confidence: 81%

Traps in undoped semi-insulating InP obtained by high temperature annealing

Marrakchi

Cherkaoui

Karoui

et al. 1996

Journal of Applied Physics

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The presence and evolution of traps in undoped semi-insulating ͑SI͒ InP obtained by high temperature annealing ͑900°C for 90 h͒ in poor or rich phosphorus atmosphere has been studied by means of photoinduced current transient spectroscopy. Six traps named A1 to A6 having activation energies ranging from 0.2 to 0.6 eV have been detected in three samples submitted to the same annealing process. The samples differ in the Fe concentration of the starting material and the applied phosphorus pressure in the annealing process. A comparison of the corresponding photoinduced current transient spectroscopy spectra shows that among the observed traps, the 0.2 eV one can be related to a phosphorus deficiency, and the 0.3 eV and 0.4 eV traps could be due to an excess of phosphorus during annealing. Moreover, the trap corresponding to iron ͑0.6 eV͒ has been observed in all the studied samples.

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mentioning

confidence: 81%

Traps in undoped semi-insulating InP obtained by high temperature annealing

Marrakchi

Cherkaoui

Karoui

et al. 1996

Journal of Applied Physics

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“…One of the possible reasons for the decrease in the surface resistance is the deficiency of P induced in the dry etching [13,23]. While the annealing may recover the crystallinity lost during the dry etching [24], the high temperature treatment can even enhance the composition deficiency.…”

Section: Fabrication Of Narrow Channelsmentioning

confidence: 99%

Ballistic transport and surface scattering in (In,Ga)As-InP heterostructure narrow channels

Aleksandrova

Golz

Weidlich

et al. 2023

Semicond. Sci. Technol.

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Narrow conduction channels are fabricated from an In0.75Ga0.25As-InP heterostructure using electron-beam lithography and dry etching. The etched surface is realized to be smooth by employing a reactive ion etching. The etching-induced surface conduction is eliminated by removing the damaged surface layer using a diluted HCl solution. The negligible surface depletion for the In-rich quantum well enables to create conducting channels in arbitrary geometries such as in a circular shape. We evidence the presence of a ballistic contribution in the electron transport by demonstrating a rectification of rf excitations that is achieved by the magnetic-field-tuned transmission asymmetry in the circularly-shaped channels. The absence of the surface depletion is shown to cause, on the other hand, a surface scattering for the electrons confined in the channels. An increase of the resistance, including its anomalous enhancement at low temperatures, is induced by the gas molecules attached to the sidewalls of the channels. We also report a large persistent photoconduction, which occurs as a parallel conduction in the undoped InP barrier layer.

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“…We use a recycling factor corresponding to n-type InP because undoped InP grown using different techniques tends to have n-type background doping of the order of 1x10 15 -1x10 16 cm -3 due to silicon impurity. [22,52,53] III. RESULTS…”

Section: B Device Simulationmentioning

confidence: 99%

Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts

Raj

Rougieux

et al. 2020

IEEE J. Photovoltaics

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Most recently, III-V based ultra-thin solar cells have attracted much attention for their inherent advantages such as increased tolerance to defect recombination, efficient charge carrier separation, photon recycling, flexibility, and reduced material consumption. However, so far, almost all reported devices make use of conventional doped p-i-n kind of structures with a wide bandgap III-V lattice-matched epitaxial window layer, for passivation and reduced contact recombination. Here, we show that a high-efficiency device can be obtained utilizing an InP thin film of thickness as low as 280 nm, without the requirement of a conventional p-n homojunction or epitaxial window layer. This is achieved by utilizing a wide bandgap electron and hole selective contacts for electrons and holes transport, respectively. Under ideal conditions (assuming Interface Recombination Velocity (IRV) = 10 3 cm/s and bulk lifetime =1 us), the proposed solar cell structure can achieve efficiency as high as 28%. Although, in the presence of bulk and interface SRH recombination, the efficiency reduces, still for bulk minority carrier lifetime as low as 2ns and an IRV as high as 10 5 cm/s, an efficiency of ~22% can be achieved with InP thickness as low as 280 nm. The proposed device structure will be beneficial in cases where the growth of controlled p-n homojunction and window layer can be tedious as in case of low-cost deposition techniques, such as thin-film vapour-liquidsolid (TF-VLS) and close-spaced vapour transport (CSVT).

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Heat treatments of InP wafers

Cited by 16 publications

References 9 publications

Traps in undoped semi-insulating InP obtained by high temperature annealing

Traps in undoped semi-insulating InP obtained by high temperature annealing

Ballistic transport and surface scattering in (In,Ga)As-InP heterostructure narrow channels

Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts

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