Heat transport through interfaces with and without misfit dislocation arrays

Hanisch-Blicharski, Anja; Krenzer, B.; Wall, Simone; Kalus, Annika; Frigge, T.; Hoegen, M. Horn‐von

doi:10.1557/jmr.2012.316

Cited by 7 publications

(6 citation statements)

References 29 publications

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“…The latter mechanism is widely considered in the diffuse mismatch model [23], in which a temperature gradient drives the energy transfer across the interface described by a thermal boundary conductance. Since the timescale related with this mechanism is in the range of about 10 ps or longer [41] and we observe the increase of the oxygen signal before e-ph equilibration in Fe occurs, we exclude a thermal mechanism as an explanation for the ultrafast excitation of MgO. As discussed by Huberman and Overhauser [20], on the metallic side electrons can couple to hybrid phonons which are localized at the metal-insulator interface and decay into both constituents.…”

Section: Discussionmentioning

confidence: 61%

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Microscopic nonequilibrium energy transfer dynamics in a photoexcited metal/insulator heterostructure

et al. 2019

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The element specificity of soft X-ray spectroscopy makes it an ideal tool for analyzing the microscopic origin of ultrafast dynamics induced by localized optical excitation in metal-insulator heterostructures. Using [Fe/MgO]n as a model system, we perform ultraviolet pump/soft X-ray probe experiments, which are sensitive to all constituents of these heterostructures, to probe both electronic and lattice excitations. Complementary ultrafast electron diffraction experiments independently analyze the lattice dynamics of the Fe constituent, and together with ab initio calculations yield comprehensive insight into the microscopic processes leading to local relaxation within a single constituent or non-local relaxation between two constituents. Besides electronic excitations in Fe, which are monitored at the Fe L3 absorption edge and relax within 1 ps by electron-phonon coupling, soft X-ray analysis identifies a change at the oxygen K absorption edge of the MgO layers which occurs within 0.5 ps. This ultrafast energy transfer across the Fe-MgO interface is mediated by high-frequency, interface vibrational modes, which are excited by hot electrons in Fe and couple to vibrations in MgO in a mode-selective, non-thermal manner. A second, slower timescale is identified at the oxygen K pre-edge and the Fe L3 edge. The slower process represents energy transfer by acoustic phonons and contributes to thermalization of the entire heterostructure. We thus find that the interfacial energy transfer is associated with non-equilibrium behavior in the phonon system. Because our experiments lack signatures of charge transfer across the interface, we conclude that phonon-mediated processes dominate the competition of electronic and lattice excitations in these non-local, non-equilibrium dynamics.

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Section: Discussionmentioning

confidence: 61%

“…S5. On such timescales electrons and phonons have equilibrated with each other and the heterostructure is close to its fully thermalized state [13,41]. In this case the major part of the excess energy is hosted by phonons since the specific heat of the lattice is considerable larger then the one of the electrons.…”

Section: A Ultrafast Soft X-ray Spectroscopymentioning

confidence: 99%

Microscopic nonequilibrium energy transfer dynamics in a photoexcited metal/insulator heterostructure

et al. 2019

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“…Discussions of the ITC in superlattices suggest that the existence of dislocations can significantly impact the ITC, and other papers have shown similar results, in which the ITR at the contacting interface increases with dislocation density . However, Blicharski et al observed that the ITC does not depend on interfacial dislocations within experimental error . The experimental results of Hopkins also indicate that the dislocation density does not affect heat transfer at well acoustically matched interfaces…”

Section: Factors Influencing the Itrmentioning

confidence: 78%

“…[13,96] However, Blicharski et al observed that the ITC does not depend on interfacial dislocations within experimental error. [97] The experimental results of Hopkins also indicate that the dislocation density does not affect heat transfer at well acoustically matched interfaces. [13] A study of the ITR at silicon-polymer interfaces determined that the ITR is strongly dependent on the interfacial bonding strength.…”

Section: Interfacial Morphology and Bonding Statusmentioning

confidence: 97%

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Zhang

Yuan

Xiong

et al. 2017

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With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed.

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“…As measured by Costescu et al, 6 for the thermal conductance of TiN/MgO (001) with a coherent interface, TiN/MgO (111) with a low density of defects and TiN/Al 2 O 3 with a high density of defects, no significant difference was found. As shown by Hanisch-Blicharski et al, 10 thermal conductance of the Bi/Si interface with and without interface defects differs < 7%; the role of interface defects appears trivial. The work by Hopkins et al 11 suggests a minor effect of interface defect density on thermal conductance across GaSb/ GaAs interfaces.…”

Section: Introductionmentioning

confidence: 83%

Phonon Transport Across Coherent and Incoherent Interfaces

Chen

Yang

2019

JOM

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Phonon-mediated heat transport in two-dimensional superlattices with coherent and incoherent interfaces is simulated by using the concurrent atomistic-continuum method. The energy transmission across superlattices with incoherent interfaces is found to be an order of magnitude lower than that with coherent interfaces. The simulation results provide a direct visualization of the transient processes of phonon propagation and scatterings, which facilitates an improved mechanistic understanding of phonon transport across multiple interfaces. This work finds that heat conduction in superlattices with coherent interfaces is dominated by coherent phonons, while the existence of defects that comprise the incoherent interfaces destroys the wave interference and changes the phonon transport nature from coherent to diffusive. In addition, phonon scattering by interface defects becomes stronger with decreasing phonon wavelength, and the phonon coherence is destroyed for phonons with 5 nm wavelength.

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Heat transport through interfaces with and without misfit dislocation arrays

Abstract: Abstract

Cited by 7 publications

References 29 publications

Microscopic nonequilibrium energy transfer dynamics in a photoexcited metal/insulator heterostructure

Microscopic nonequilibrium energy transfer dynamics in a photoexcited metal/insulator heterostructure

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale

Phonon Transport Across Coherent and Incoherent Interfaces

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