Heat Transfer Across Metal-Dielectric Interfaces During Ultrafast-Laser Heating

Guo, Liang; Hodson, Stephen L.; Fisher, Timothy S.; Xu, Xianfan

doi:10.1115/1.4005255

Cited by 85 publications

(81 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, electron-phonon coupling across an interface, i.e., coupling between metal electrons and semiconductor phonons, provides a parallel heat flow path in addition to phonon-phonon heat transfer across the interface. Time domain thermoreflectance (TDTR) experiments in the literature 7,8 suggest that direct electron-phonon coupling can contribute significantly to heat transport across metal-semiconductor interfaces, and models [9][10][11][12][13][14] have been developed to quantify its contribution. The different mechanisms of heat transport at a metal-semiconductor interface are summarized in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…Much of the existing experimental data 8,20,21 on thermal conductance of metal-semiconductor interfaces involves materials with mismatched lattice constants, for which the interface atomic structure is likely to be at least partially amorphous. Experimental studies that simultaneously characterize interfacial atomic structure along with interface conductance are scarce 22,23 .…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

Sridhar

Feser

et al. 2017

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

Heat transfer across metal-semiconductor interfaces involves multiple fundamental transport mechanisms such as elastic and inelastic phonon scattering, and electron-phonon coupling within the metal and across the interface. The relative contributions of these different transport mechanisms to interface conductance remains unclear in the current literature. In this work, we use a combination of first-principles calculations under the density functional theory framework and heat transport simulations using the atomistic Green's function (AGF) method to quantitatively predict the contribution of the different scattering mechanisms to the thermal interface conductance of epitaxial CoSi 2 -Si interfaces. An important development in the present work is the direct computation of interfacial bonding from density functional perturbation theory (DFPT) and hence the avoidance of commonly used 'mixing rules' to obtain the cross-interface force constants from bulk material force constants. Another important algorithmic development is the integration of the recursive Green's function (RGF) method with Büttiker probe scattering that enables computationally efficient simulations of inelastic phonon scattering and its contribution to the thermal interface conductance. First-principles calculations of electron-phonon coupling reveal that crossinterface energy transfer between metal electrons and atomic vibrations in the semiconductor is mediated by delocalized acoustic phonon modes that extend on both sides of the interface, and phonon modes that are localized inside the semiconductor region of the interface exhibit negligible coupling with electrons in the metal. We also provide a direct comparison between simulation predictions and experimental measurements of thermal interface conductance of epitaxial CoSi 2 -Si interfaces using the time-domain thermoreflectance technique. Importantly, the experimental results, performed across a wide temperature range, only agree well with predictions that include all transport processes: elastic and inelastic phonon scattering, electron-phonon coupling in the metal, and electron-phonon coupling across the interface.2

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

Sridhar

Feser

et al. 2017

Phys. Rev. B

Self Cite

View full text Add to dashboard Cite

show abstract

“…The investigation on the TBC across metal-nonmetal interfaces, which is the total heat current Q divided by the temperature drop at the interface shown in Figure 1(a), is one of the most important topics for thermal engineering. Experimentally, the TBC across metal-nonmetal interfaces is measured with the thermoreflectance technique [3][4][5][6][7] and the steady state technique [8]. One of the concerns to researchers is that some experimentally measured values significantly deviate from the theoretical calculated ones [9,10] where only phonons are considered.…”

Section: Introductionmentioning

confidence: 99%

Thermal boundary conductance across metal-nonmetal interfaces: effects of electron-phonon coupling both in metal and at interface

Wang

Zhou

et al. 2015

Eur. Phys. J. B

View full text Add to dashboard Cite

Abstract. We theoretically investigate the thermal boundary conductance across metal-nonmetal interfaces in the presence of the electron-phonon coupling not only in metal but also at interface. The thermal energy can be transferred from metal to nonmetal via three channels: (1) the phonon-phonon coupling at interface; (2) the electron-phonon coupling at interface; and (3) the electron-phonon coupling within metal and then subsequently the phonon-phonon coupling at interface. We find that these three channels can be described by an equivalent series-parallel thermal resistor network, based on which we derive out the analytic expression of the thermal a e-mail:zhoujunzhou@tongji.edu.cn b e-mail:jieustc@gmail.com 2 boundary conductance. We then exemplify different contributions from each channel to the thermal boundary conductance in three typical interfaces: Pb-diamond, Ti-diamond, and TiN-MgO. Our results reveal that the competition among above channels determines the thermal boundary conductance.3

show abstract

“…Contrary to the previous paragraphs discussions, there have been experimental works that demonstrate electon-interface scattering can change the overall rate of e-p equilibration of a thin Au film when the electrons have a different energy density than the lattice [35][36][37].…”

Section: Motivation and Backgroundmentioning

confidence: 84%

“…These works speculated that when the film thickness is less than the e-p mean free path, electron-interface scattering can result in an increase in e-p coupling [35][36][37]. An additional finding from these works determined that as the degree of e-p non-equilibrium increases (i.e., as the electron temperature increases and T e − T 0 T 0 ), the electron-interface scattering mechanism increases.…”

Section: Motivation and Backgroundmentioning

confidence: 99%

The Role of Electronic and Vibrational Scattering on Thermal Transport Across Multiple Interfaces in Nanostructures

Giri¹

View full text Add to dashboard Cite

Rapid miniaturization and faster working speeds in electronic devices has led to challenges in their thermal mitigation. However, thermal conductivity of the constituent materials in the nano-devices, even though a very critical parameter in their design, is mostly overlooked and the thermal performance of the device is mainly controlled through packaging techniques. However, it would be advantageous for a diverse spectrum of technologies, which ultimately fail due to either high density of interfaces or due to high operating frequencies, to control and tune thermal properties at the submicron length scale and femtoto-picosecond time scales. Therefore, a comprehensive understanding of how heat flows across nanosystems that are mostly limited by interfacial thermal transport would prove to be quintessential for the design of various electronic devices. For example, the contribution of electronic thermal resistance across metal/semiconductor interfaces has been a subject of debate for the past several decades; understanding the intrinsic electron-electron, electron-phonon and electron-boundary scattering mechanisms in these devices could potentially lead to transistors with higher operating frequencies. Moreover, with the advent of new fabrication technologies, the role of phononic-driven thermal resistances across hybrid interfaces of inorganic/organic materials and amorphous semiconductor superlattices (SLs) with high density of interfaces has largely been unexplored.It is the goal of this work to comprehensively explore interfacial thermal transport in these material systems by understanding the fundamental scattering mechanisms of the energy carriers, which dominate thermal transport at various length and time scales. In this regard, a combination of time-domain thermoreflectance (TDTR) experiments and non-equilibrium molecular dynamics (NEMD) simulations will be implemented to achieve these goals.The nonequilibrium between electrons and phonons at metal/semiconductor interfaces in high frequency microelectronic devices serves as a bottleneck to heat transfer in these ii devices. To understand this phenomena, TDTR is used to probe the highly non-equilibrium condition that is induced due to pulse absorption by thin Au films deposited on various dielectric substrates. For electron temperature excursions of ≤ 3,500 K in Au, it is shown that while the increase in the excited carrier density increases the e-p coupling in the metal, the bond strength between the metal and the substrate dictates the energy transfer rate across the interface during this highly non-equilibrium time regime. Furthermore, at time scales when the electrons have fully thermalized with the lattice, electron-phonon coupling does not influence the phonon-driven thermal boundary conductance.Another phenomena that lead to device failure are the phonon-driven thermal boundary resistance in multilayered semiconductors used in technologies such as thermoelectric power generation or phase change memory devices. TDTR is used to simultaneously...

show abstract

Heat Transfer Across Metal-Dielectric Interfaces During Ultrafast-Laser Heating

Cited by 85 publications

References 19 publications

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

Thermal transport across metal silicide-silicon interfaces: First-principles calculations and Green's function transport simulations

Thermal boundary conductance across metal-nonmetal interfaces: effects of electron-phonon coupling both in metal and at interface

The Role of Electronic and Vibrational Scattering on Thermal Transport Across Multiple Interfaces in Nanostructures

Contact Info

Product

Resources

About