Heat-spreading diamond films for GaN-based high-power transistor devices

Seelmann‐Eggebert, M.; Meisen, P.; Schaudel, F.; Koidl, P.; Vescan, A.; Leier, H.

doi:10.1016/s0925-9635(00)00562-8

Cited by 78 publications

(54 citation statements)

References 6 publications

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“…Recently, the integration of diamond with high power AlGaN/GaN high mobility electron devices (HEMTs) was demonstrated to be a very promising solution to optimize their heat management, [1,2,3,4,5,6,7,8,9, 10] which enables handling much higher operational electrical power densities. [1] To take 5 full advantage of the high thermal conductivity of diamond, reaching up to 3000 W/mK for single crystalline high quality diamond, the diamond heat dissipation layer should be located as close as possible to the heat source, ie the device channel.…”

Section: Introductionmentioning

confidence: 99%

“…[12,13] Two strategies for combining diamond with the devices using the direct growth approach have 15 emerged in the recent years, , namely, either by substituting the SiC or Si substrate, [1,3,4,5] or by growing the diamond films on top of the device passivation layer. [6,7,8,9, 10] However, in both strategies the heat has to diffuse across the nucleation region of the diamond film, and therefore knowing how the heat is spread in the first microns of the polycrystalline diamond is fundamental 20 in order to optimize their thermal resistance and thus improve their lifetime and reduce its energy consumption. A few inconsistent results are available in the literature about the in-plane thermal transport in the first microns of polycrystalline diamond showing values ranging from a few W/mK up to 800 W/mK for layers thicknesses below 2 µm.…”

Section: Introductionmentioning

confidence: 99%

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Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

et al. 2016

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The in-plane thermal conductivity of polycrystalline diamond near its nucleation site, which is a key parameter to an efficient integration of diamond in modern high power AlGaN/GaN high electron mobility devices, has been studied. By controlling the lateral grain size evolution through the diamond growth conditions it has been possible to increase the in-plane thermal conductivity of the polycrystalline diamond film for a given thickness. Besides, the in-plane thermal conductivity has been found strongly inhomogeneous across the diamond films, being also possible to control this inhomogeneity by the growth conditions. The experimental results has been explained through a combined effect of the phonon mean free path confinement due the grain size and the quality of the grain/grain interfaces, showing that both effects evolve with the grain expansion and are dependant on the diamond growth conditions. This analysis shows how the thermal transport in the near nucleation region of polycrystalline diamond can be controlled, which ultimately opens the door to create ultra-thin layers with a engineered thermal conductivity, ranging from a few W/mK to a few hundreds of W/mK.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

et al. 2016

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“…Rather than using the diamond only as a heat spreader attached to the semiconductor device chip, different proposals have emerged recently for growing polycrystalline diamond directly onto different parts of AlGaN/GaN HEMTs for heat sinking. [3][4][5][6][7][8][9][10][11] This strategies typically rely on replacing the Si or SiC substrate, 3,7 and/or growing the diamond on top of the HEMT channel, [8][9][10]12,13 which ultimately means that the heat flux has to diffuse across the nucleation region of the polycrystalline diamond, in which the size of the crystals lies in the nanoscale.…”

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confidence: 99%

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

Anaya

Rossi

Alomari

et al. 2015

Applied Physics Letters

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The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers.

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“…27 Dimensions of materials used in the simulation are shown in Table I and Table II. Due to its large thermal conductivity, the diamond layer can rapidly dissipate heat away from the heat source to the bottom Cu layer which is designed to connect to a heat sink.…”

Section: Methodsmentioning

confidence: 99%

FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

Denu

Mirani

et al. 2017

AIP Advances

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The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer. The effect of carbide interlayer in reduction of interfacial thermal stress is investigated. The results show that the carbide interlayer film thickness is critical in stress reduction for a copper/diamond/copper heat spreader device. Diamond/SiC device has lower interfacial stress without interlayer. The study of mechanical and thermal property of diamond heat spreader is useful for optimal designs of efficient heat spreader for electronic components.

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Heat-spreading diamond films for GaN-based high-power transistor devices

Cited by 78 publications

References 6 publications

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

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