Heat-induced local structural variation in porous-type amorphous alumina prepared by anodization

Hashimoto, Hideki; Fujita, Yuki; Yazawa, Koji; Asoh, Hidetaka

doi:10.1016/j.jpcs.2023.111312

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…A diffuse halo also remained, suggesting that a part of the oxide, probably a phosphate-containing oxide, was not fully crystallized. [22][23][24]…”

Section: Resultsmentioning

confidence: 99%

Element Distribution in Porous Ga Oxide Obtained by Anodizing Ga in Phosphoric Acid

Kondo

Matsuya

Habazaki

2023

J. Electrochem. Soc.

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A scanning tunneling electron microscopy/energy-dispersive spectroscopy (EDS) study of a porous Ga oxide film formed by an anodization process was conducted to examine the crystalline structure of the film and the elemental distribution in the oxide film before and after heat treatment. The as-formed anodic film with a morphology resembling the well-known porous anodic Al oxide film was amorphous, crystallizing after heat treatment at 600°C without changing the morphology and elemental distribution. The EDS elemental maps disclosed the duplex nature of the pore wall oxide; the phosphate anion was contaminated in the outer oxide layer next to the pores, and the inner layer consisted of relatively pure Ga oxide, practically free from phosphate. The similarity of morphology and elemental distributions between the porous anodic Al and Ga oxides suggests that the growth of both anodic oxide films proceeds under the same mechanism. In addition, crystallized porous Ga oxides are expected to be applied to fabricate various functional devices requiring geometrically controlled semiconductor nanohole arrays, such as devices for hydrogen formation.

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“…A diffuse halo also remained, suggesting that a part of the oxide, probably a phosphate-containing oxide, was not fully crystallized. [22][23][24]…”

Section: Resultsmentioning

confidence: 99%

Element Distribution in Porous Ga Oxide Obtained by Anodizing Ga in Phosphoric Acid

Kondo

Matsuya

Habazaki

2023

J. Electrochem. Soc.

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“…In previous works concerning the anodization of Al, a one-step formation process for alumina nanowires has been reported 29 , 30 . Anodic porous alumina usually has a dual layered structure 31 , 32 . The outer layer, which faces the electrolyte, is usually contaminated by anions originating from the anodization electrolyte and easily dissolves into the anodization electrolyte during anodization.…”

Section: Resultsmentioning

confidence: 99%

Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal

Kondo

2023

Sci Rep

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I developed a simple crystal growth process to obtain a single Ga crystal. The crystal orientation of a Ga plate could be controlled by a crystal growth process using a seed Ga crystal. By anodizing a [100]-direction highly oriented Ga plate, I realized the formation of a highly ordered array of high-aspect-ratio straight nanoholes. It was observed that the nanohole growth direction depends on the crystal orientation of a Ga plate. To date, this dependence has yet to be observed in materials other than porous Ga oxide obtained by an anodization process. The present fabrication process is expected to be applied to the fabrication of various functional devices requiring a porous Ga oxide with high-aspect-ratio straight nanoholes, such as hydrogen formation devices and functional filters.

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Porous alumina–lithium composites for novel lithium-ion batteries

Hakamy,

Abd-Elnaiem

2024

J Appl Electrochem

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Heat-induced local structural variation in porous-type amorphous alumina prepared by anodization

Cited by 5 publications

References 35 publications

Element Distribution in Porous Ga Oxide Obtained by Anodizing Ga in Phosphoric Acid

Element Distribution in Porous Ga Oxide Obtained by Anodizing Ga in Phosphoric Acid

Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal

Porous alumina–lithium composites for novel lithium-ion batteries

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