Abstract:Chemically amplified resists are used for 248 nm, 193 nm, immersion and extreme ultraviolet (UV) lithography. Among many process steps, post exposure bake (PEB) is the key process to make the desired small line width and critical dimension control. During PEB, the de-protection reaction and acid diffusion are determined by bake temperature and time. One of the key factors that determines the de-protection and acid diffusion is the initial temperature rising of the hot plate. The unpredictable temperature risin… Show more
“…It is common practice during the pre-drying and post-drying stages of photoresist application to maintain a temperature range of 85 °C to 130 °C. 25 Studies have demonstrated that the thermal degradation of all six PAGs is not significantly pronounced within this temperature range, meeting the requirements of practical applications.…”
A total of six sulfonate polymeric nonionic photoacid generators (PAGs) have been synthesised and subjected to comprehensive characterization for their application in photoresist materials.
“…It is common practice during the pre-drying and post-drying stages of photoresist application to maintain a temperature range of 85 °C to 130 °C. 25 Studies have demonstrated that the thermal degradation of all six PAGs is not significantly pronounced within this temperature range, meeting the requirements of practical applications.…”
A total of six sulfonate polymeric nonionic photoacid generators (PAGs) have been synthesised and subjected to comprehensive characterization for their application in photoresist materials.
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