Heat capacity of AIIB2IIIC4VI-type ternary semiconducting compounds at low temperatures

Mamedov, K. K.; Aliev, M. M.; Kerimov, I. G.; Nani, R. Kh.

doi:10.1002/pssa.2210090255

Cited by 20 publications

(7 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We note that our experimental and theoretical results for are very similar; however, our value for Cv is 21% smaller than those measured at 300 K in CdGa2S4 83 and in other OVCs. 83,84 On the other hand, we have obtained an average value of the macroscopic Grüneisen parameter, , of 0.46(2) and 0.49(1) from our experimental and theoretical data, respectively. These values agree quite well with the typical range of the found in tetrahedral compounds (between 0.5 and 1.25).…”

Section: Grüneisen Parameter and Thermal Propertiessupporting

confidence: 72%

Vibrational properties of CdGa2S4 at high pressure

Gallego-Parra

Gomis

Vilaplana

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressureinduced phase transitions. These measurements have been complemented and compared with lattice-dynamics ab initio calculations including the TO-LO splitting at high pressures in order to provide a better assignment of experimental Raman modes. In addition, experimental and theoretical Grüneisen parameters have been reported in order to calculate the molar heat capacity and thermal expansion coefficient of CdGa2S4. Our measurements provide evidence that CdGa2S4 undergoes an irreversible phase transition above 15 GPa to a Raman-inactive phase, likely with disordered rocksalt structure. Moreover, the Raman spectrum observed on downstroke from 25 GPa to 2 GPa has been attributed to a new phase, tentatively identified as a disordered zincblende structure, that undergoes a reversible phase transition to the Raman-inactive phase above 10 GPa.

show abstract

Section: Grüneisen Parameter and Thermal Propertiessupporting

confidence: 72%

Vibrational properties of CdGa2S4 at high pressure

Gallego-Parra

Gomis

Vilaplana

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…This value is not too high for layered compounds [24][25][26], as typical reported values for θ are ∼100 K [27]. These were obtained using measurements of the thermal conductivity and the layered (quasi-two-dimensional) structure of TlBiS 2 was not taken into account.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO₃ Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

Okaniwa

Fujisawa

Shimizu

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

TlBiS 2 is a narrow-gap semiconductor with a layered structure, isoelectronically analogous to PbS. Large single crystals were grown by the Bridgman-Stockbarger method from the melt and characterized by x-ray diffraction. The lattice parameters were determined and the discrepancy between those already reported was removed. From IR reflectivity measurements in the plasma region, the number of carriers was calculated. Also a strong anisotropy of the electrical conductivity was detected and the narrow-gap character of the material was supported by electrical measurements in the range of 10-300 K.

show abstract

“…These transitions are weak compared to the absorption edge. The well-known discrete intervalence-band absorption (i.e., V 2 → V 1 ) occurs near 0.22 eV (5.5 µm) in p-type CdGeAs 2 [29,30]. Its intensity in this sample was about 0.4 cm −1 with E ⊥ c. This intervalence-band absorption value corresponds to a hole concentration of about 5 × 10 15 cm −3 .…”

Section: Resultsmentioning

confidence: 61%

Urbach rule used to explain the variation of the absorption edge in CdGeAs₂crystals

Bai

Schunemann

et al. 2005

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

The absorption edge has been studied over the temperature range from 5 to 300 K in both p-type and n-type bulk CdGeAs2 crystals. An exponential distribution of states, or Urbach tail, below the direct band edge produces a linear dependence of d [log(α)]/d (hν) with incident photon energy hν. The slope of this edge is nearly independent of temperature in p-type samples, but varies with temperature in n-type samples. These differences in behaviour are explained by a model that includes both thermal (phonon) and structural disorder contributions to the exponential tail of states. The structural disorder contribution was found to be dominant in compensated p-type samples. Indium-doped n-type CdGeAs2 crystals exhibited the more conventional thermal (i.e., phonon) behaviour.

show abstract

Heat capacity of AIIB2IIIC4VI-type ternary semiconducting compounds at low temperatures

Cited by 20 publications

References 3 publications

Vibrational properties of CdGa2S4 at high pressure

Vibrational properties of CdGa2S4 at high pressure

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO₃ Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

Urbach rule used to explain the variation of the absorption edge in CdGeAs₂crystals

Contact Info

Product

Resources

About

Heat capacity of AIIB2IIIC4VI-type ternary semiconducting compounds at low temperatures

Cited by 20 publications

References 3 publications

Vibrational properties of CdGa2S4 at high pressure

Vibrational properties of CdGa2S4 at high pressure

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO3 Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

Urbach rule used to explain the variation of the absorption edge in CdGeAs2crystals

Contact Info

Product

Resources

About

Piezo- and Ferroelectric Properties of Self-Assembled PbTiO₃ Nanoisland Structures Fabricated by Metalorganic Chemical Vapor Deposition

Urbach rule used to explain the variation of the absorption edge in CdGeAs₂crystals