Heat capacity anomaly near magnetic phase transition in GaFeO3

Biernacka, M.; Szafrański, Marek; Rećko, K.; Olszewski, W.; Satuła, D.; Butkiewicz, P.; Szymański, K.

doi:10.1016/j.jmmm.2021.168978

Cited by 3 publications

(1 citation statement)

References 34 publications

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“…Crystals were grown at the rate of 3-5 mm/h, with feed and seed rods rotated at 15 rpm in the opposite directions. The growth direction was enforced using oriented GaFeO 3 seeds in the a or c crystallographic direction [22,23]. The misorientation of growth directions with respect to the crystalline directions is listed in Table I.…”

Section: Single-crystal Growth and Orientationmentioning

confidence: 99%

Electrical polarization switching in bulk single-crystal GaFeO3

Biernacka,

Butkiewicz,

Kapcia

et al. 2023

Phys. Rev. B

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The electrical polarization switching on a stoichiometric GaFeO 3 single crystal was measured, and a model of atomic displacements responsible for the polarization reverse was proposed. The widely adapted mechanism of polarization switching in GaFeO 3 can be applied to stoichiometric, perfectly ordered crystals. However, the grown single crystals, as well as thin films of Ga-Fe-O, show pronounced atomic disorder. Using piezoresponse force microscopy, the electrical polarization switching on a crystal surface perpendicular to the electrical polarization direction was demonstrated. Atomic disorder in the crystal was measured by x-ray diffraction and Mössbauer spectroscopy. These measurements were supported by ab initio calculations. Using analysis of atomic disorder and electronic structure calculations, the energies of defects of cations in foreign cationic sites were estimated. The energies of the polarization switch were estimated, confirming the proposed mechanism of polarization switching in GaFeO 3 single crystals.

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Section: Single-crystal Growth and Orientationmentioning

confidence: 99%