We have studied the heat capacity and enthalpies of solid solutions in the quasibinary system Bi 2 Se 3 − Bi 2 Te 3 at low and high temperatures. Based on low-temperature measurements of the heat capacity, we have calculated the values of the enthalpy, entropy, and reduced Gibbs energy of the compounds under standard conditions. We have determined the temperature dependences of the thermodynamic functions for the solid solutions Bi 2 Se 3 − Bi 2 Te 3 (50, 70, and 80 mole% Bi 2 Te 3 ) in the temperature range 298.15 K − T mp .Semiconductor compounds of the A 2 B 3 type (where A and B are respectively Group V and Group VI elements) have been widely used as n-type thermoelectric materials for solid-state microcoolers and thermogenerators [1]. From a practical standpoint, more promising systems are the complex systems formed by binary semiconductor compounds. This is connected with the fact that in multicomponent systems, the properties of the materials vary over a broad range and, by altering the composition, we can obtain materials with the required operating characteristics. Accordingly, data on the thermodynamic properties of these systems are important. Literature data are limited to calorimetric data on enthalpies of formation for solid solutions Bi 2 Se 3 − Bi 2 Te 3 [2, 3]. However, their enthalpies of formation are negative according to data in [2] and positive according to data in [3]; so even these characteristics require additional experimental study.The aim of this work was to study the heat capacity in the low temperature region and the enthalpies of solid solutions Bi 2 Se 3 − Bi 2 Te 3 (50, 70, and 80 mole% Bi 2 Te 3 ), to determine the standard values for the basic thermodynamic functions and their temperature dependences in the range from room temperature to the melting points which for the solid state is within the range from 858 K (T mp Bi 2 Te 3 ) to 978 K (T mp Bi 2 Se 3 ).In order to obtain the specimens, the starting compounds Bi 2 Se 3 and Bi 2 Te 3 , prepared from components of 99.999 mass% purity, were ground into powders, mixed, and pressed into tablets of diameter 10 mm and height 4-5 mm. They were sintered under a helium atmosphere, high-purity grade (99.985 vol.%), at a temperature of 773 K in ampuls made from molybdenum glass. The specimens were annealed at 643 K for 2210 h.X-ray analysis was carried out on a URS-2.0 apparatus with RKD cameras of diameter 57.3 mm. We used nickel-filtered copper radiation for this study. According to microstructural and x-ray analysis data, after prolonged annealing the specimens were single-phase with a close to additive lattice constant a, between the values for Bi 2 Se 3 (0.4137 nm) and Bi 2 Te 3 (0.4386 nm), while the parameter c was slightly higher than the value calculated by the additivity rule for Bi 2 Se 3 (2.8630 nm) and Bi 2 Te 3 (3.0497 nm).