Heading for brighter and faster β-Ga2O3 scintillator crystals

Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere

“…The light outputs were 4000-1300 photons/MeV, and the decay times of the three components were confirmed. Previous research from the literature has reported that the higher the free electron concentration, the lower the light output and the shorter the decay time [28]. Although there are no data on the actual Si concentration in the crystal, it has also been reported that intentional Si addition increases the free electron concentration.…”

Fundamental aspects, recent progress and future prospects of inorganic scintillators

“…Therefore, much research followed since the discovery. [448][449][450] GaN is also a well-known semiconductor material because it has been widely used for white LED lights, and it has been the latest winner of the Novel prize in Physics related to luminescent materials. 451) Previously, some challenges were done to achieve good scintillation performance of GaN, but no samples emitted bright scintillation detectable with common pulse height system.…”

First‐Principles Study on the Effects of Ta Doping and Point Defects of Hi and VO on the Photoelectric Properties of β‐Ga2O3

“…β-Ga 2 O 3 has broad application prospects in deep-ultraviolet detectors, [5] high-power field-effect transistors, [6] semiconductor lasers, [7] gas sensors, [8] scintillators, [9] and thermoluminescent dosimeters. [10] The forbidden bandwidth of Al-doped β-Ga 2 O 3 single crystal increases, and the absorption cutoff edge is blueshifted. [11,12] The incorporation of V improves the crystal quality of β-Ga 2 O 3 and increases the carrier concentration and transmittance in the near-infrared region.…”

“…β‐Ga 2 O 3 has broad application prospects in deep‐ultraviolet detectors, [ 5 ] high‐power field‐effect transistors, [ 6 ] semiconductor lasers, [ 7 ] gas sensors, [ 8 ] scintillators, [ 9 ] and thermoluminescent dosimeters. [ 10 ]…”