${\hbox {Nd}}^{3+}{\hbox {:LaF}}_{3}$ as a Step-Wise Excited Scintillator for Femtosecond Ultraviolet Pulses

Nakazato, Tomoharu; Cadatal-Raduban, Marilou; Yamanoi, Kohei; Tsuboi, Madoka; Furukawa, Yusuke; Pham, Minh Hong; Estacio, Elmer; Shimizu, Toshihiko; Sarukura, Nobuhiko; Fukuda, Kentaro; Suyama, Toshihisa; Yanagida, Takayuki; Yokota, Yuui; Yoshikawa, Akira; Sanda, Fumio

doi:10.1109/tns.2010.2041362

Cited by 21 publications

(11 citation statements)

References 19 publications

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“…Lasing from Nd 3+ -doped lanthanum fluoride (Nd 3+ :LaF 3 ) has been reported by Waynant and Dubinskii [6][7][8]. Possibility of an all-solid-state VUV laser via step-wise excitation and two-photon excitation in Nd 3+ :LaF 3 [9] and Nd 3+ -doped lutetium lithium fluoride (Nd 3+ :LuLiF 4 ) [10], respectively has also been reported. Our previous research revealed that Nd 3+ -doped lanthanum barium fluoride (Nd 3+ :La 0.9 Ba 0.1 F) has a broader fluorescence bandwidth compared with Nd 3+ :LaF 3 and suggest the potential of Nd 3+ :La 0.9 Ba 0.1 F as a tunable laser material or as gain medium for short pulse amplification [11,12].…”

Section: Introductionmentioning

confidence: 99%

Significant blue-shift in photoluminescence excitation spectra of Nd3+:LaF3 potential laser medium at low-temperature

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Significant blue-shift in photoluminescence excitation spectra of Nd3+:LaF3 potential laser medium at low-temperature

et al. 2015

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“…As such, development of detectors in the VUV region is also crucial. Various reports focused on the detection of VUV light through scintillation in rare earth-doped wide band gap insulators [4][5][6] and wide band gap semiconductors [7][8][9]. Scintillation relies on the excitation and de-excitation of an activator ion (in rare earth-doped insulators), or the generation and recombination of electron and hole pairs (in wide band gap semiconductors), that result in photoluminescence (PL) emission, usually in the longer ultraviolet or visible wavelength regions, followed by the detection of this PL emission using a conventional detector, such as a photomultiplier tube.…”

Section: Introductionmentioning

confidence: 99%

Effect of Substrate and Thickness on the Photoconductivity of Nanoparticle Titanium Dioxide Thin Film Vacuum Ultraviolet Photoconductive Detector

et al. 2021

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Vacuum ultraviolet radiation (VUV, from 100 nm to 200 nm wavelength) is indispensable in many applications, but its detection is still challenging. We report the development of a VUV photoconductive detector, based on titanium dioxide (TiO2) nanoparticle thin films. The effect of crystallinity, optical quality, and crystallite size due to film thickness (80 nm, 500 nm, 1000 nm) and type of substrate (silicon Si, quartz SiO2, soda lime glass SLG) was investigated to explore ways of enhancing the photoconductivity of the detector. The TiO2 film deposited on SiO2 substrate with a film thickness of 80 nm exhibited the best photoconductivity, with a photocurrent of 5.35 milli-Amperes and a photosensitivity of 99.99% for a bias voltage of 70 V. The wavelength response of the detector can be adjusted by changing the thickness of the film as the cut-off shifts to a longer wavelength, as the film becomes thicker. The response time of the TiO2 detector is about 5.8 μs and is comparable to the 5.4 μs response time of a diamond UV sensor. The development of the TiO2 nanoparticle thin film detector is expected to contribute to the enhancement of the use of VUV radiation in an increasing number of important technological and scientific applications.

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“…In comparison, Nd-doped lanthanum barium fluoride (Nd:LaBaF) has a broader fluorescence bandwidth than Nd:LaF 3 and has been suggested as a tunable laser material and for short pulse amplification [6]. Furthermore, Nd-doped lutetium lithium fluoride (Nd:LuLiF) can be a potential solid-state VUV laser media like Nd:LaF via twophoton excitation [7,8]. Investigating different potential laser media can lead to the development of broadband and efficient solid-state laser systems.…”

Section: Introductionmentioning

confidence: 99%

A High Q-factor, Easy-to-use, Broadband Ce:LiCAF Laser Cavity Based on Total Internal Reflection

Arita¹,

F²,

Minami³

et al. 2017

Comm. in Phys.

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We report a design of a cerium-doped lithium calcium hexafluoro aluminumate (Ce:LiCaAlF 6 , Ce:LiCAF) laser resonator based on total internal reflection (TIR). This TIR configuration is established by placing the Ce:LiCAF crystal between two calcium fluoride (CaF 2) Pellin-Broca prisms. The laser resonator exhibits a 289-nm emission with 3.5-nm spectral linewidth and 4.4-ns pulse duration. Results show that the present configuration can be a high Q-factor, easy-to-use, broadband prism resonator suitable as a laser oscillator not only in the ultraviolet (UV) region but also down to vacuum ultraviolet (VUV) wavelengths where alignment is restricted to vacuum environments.

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${\hbox {Nd}}^{3+}{\hbox {:LaF}}_{3}$ as a Step-Wise Excited Scintillator for Femtosecond Ultraviolet Pulses

Cited by 21 publications

References 19 publications

Significant blue-shift in photoluminescence excitation spectra of Nd3+:LaF3 potential laser medium at low-temperature

Significant blue-shift in photoluminescence excitation spectra of Nd3+:LaF3 potential laser medium at low-temperature

Effect of Substrate and Thickness on the Photoconductivity of Nanoparticle Titanium Dioxide Thin Film Vacuum Ultraviolet Photoconductive Detector

A High Q-factor, Easy-to-use, Broadband Ce:LiCAF Laser Cavity Based on Total Internal Reflection

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