Haze generation effect by pellicle and packing box on photomask

Kim, Jong Min; Patil, Manish; Jeong, Woo-Gun; Hur, Ikboum; Shin, Cheol; Jung, Sung-Mo; Choi, Moon-Hwan; Choi, Sang-Soo

doi:10.1117/12.747121

Cited by 3 publications

(1 citation statement)

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“…But only cleanliness and reduction in residual ions on photomask surface is not the source of haze generation because we have been suffered from short life time of haze generation than we expected. In our earlier published research paper, we found that sulfate and organic residues from pellicle frame and adhesive combined with ammonium residues of sulfate free cleaning and formed haze 1 . Under ArF illuminations, near pellicle frame area generated haze at lower haze threshold energy than central area of patterned ArF EAPSM.…”

Section: Introductionmentioning

confidence: 99%

Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM

Patil¹,

Kim²,

Jung

et al. 2008

SPIE Proceedings

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A lot of research has been carried on sulfate free cleaning process to minimize haze generating residual ions on mask surface. However sulfate free cleaned mask has been suffered from short life time of haze generation than we expected, because pellicle outgassing combines with ammonium residuals and formed haze near pellicle frame area and decrease yield. Therefore physical and PKL developed chemical surface modification treatment was studied and evaluated in term of near pellicle haze threshold energy, surface energy of mask substrate components (Qz/MoSi/Cr), AFM and AES depth profile. Dehydration bake treatment (physical surface modification treatment) and PKL developed chemical treatment increased near pellicle haze threshold energy by 2.5 and 4 times, respectively. Surface modification treatments didn't show negative effect on phase angle and transmittance losses of ArF EAPSM mask. The effect of illumination sources on surface modification treatment was also studied.

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Section: Introductionmentioning

confidence: 99%

Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM

Patil¹,

Kim²,

Jung

et al. 2008

SPIE Proceedings

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Study of the airborne SO 2 and NH 3 contamination on Cr, MoSi, and quartz surfaces of photomasks

et al. 2010

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Prevention of Progressive Mask Defects through Residual Ammonium and Sulfuric Ion Control

Jung

Patil²,

Kim³

et al. 2009

jjap

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Progressive defect generation has been a serious issue in wafer lithography, as illumination wavelength becomes shorter with the introduction of the 248 and 193 nm wavelengths. Several research groups have reported that cleaning residues, mostly ammonium and sulfate ions, on a mask surface are critical sources of progressive defect generation. A new cleaning process has been developed and studied to minimize progressive defect generation sources. The new cleaning process consists of dehydration baking, dry etching, and H 2 O 2 treatment. Dehydration baking was proposed to reduce the concentration of sulfate residues while H 2 O 2 treatment and dry etching are proposed to control ammonium ions. Dehydration baking is employed at 230 C for 600 s to reduce the sulfate ion concentrations from 32 to 1.6 ppb on chrome on glass (COG) or binary intensity mask (BIM). ArF embedded attenuate phase shift mask (EAPSM) is associated with a high concentration of ammonium ions (>5000 ppb), and is easily susceptible to progressive defect generation under ArF illumination. More than 90% ammonium extraction (removal) efficiency was achieved by H 2 O 2 treatment for ArF EAPSM. Moreover, the optimized new cleaning process has reduced the concentration of ammonium ions up to 50 ppb compared with the 1500 ppb reported by conventional RCA cleaning in ArF EAPSM. In a strictly controlled sulfate environment (less than 6 ppb), threshold defect energy has improved from 25 to 100 kJ by reducing the concentration of ammonium ions down to 45 ppb and below. Therefore, the concentration of residual ammonium ions along with residual sulfate ions should be strictly controlled to improve wafer and photomask yields.

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Haze generation effect by pellicle and packing box on photomask

Cited by 3 publications

References 5 publications

Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM

Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM

Study of the airborne SO 2 and NH 3 contamination on Cr, MoSi, and quartz surfaces of photomasks

Prevention of Progressive Mask Defects through Residual Ammonium and Sulfuric Ion Control

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