2015
DOI: 10.1007/978-3-319-24043-5_18
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HAXPES Applications to Advanced Materials

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Cited by 4 publications
(2 citation statements)
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“…The less intensive peak at approximately 289.1 eV can be ascribed to the C 1s → π*­(C–F) resonance of the PVDF binder, whereas the peak at 293.0 eV corresponds to the C 1s → σ*­(C–H) resonance. At 295.5 eV, resonances are generated from C 1s → σ*­(C–C) of PVDF . After surface modification, the peaks shift to a higher energy of 286.0 eV, which represents the C 1s → π* resonance for C–N on the BMI structure.…”
Section: Results and Discussionmentioning
confidence: 99%
“…The less intensive peak at approximately 289.1 eV can be ascribed to the C 1s → π*­(C–F) resonance of the PVDF binder, whereas the peak at 293.0 eV corresponds to the C 1s → σ*­(C–H) resonance. At 295.5 eV, resonances are generated from C 1s → σ*­(C–C) of PVDF . After surface modification, the peaks shift to a higher energy of 286.0 eV, which represents the C 1s → π* resonance for C–N on the BMI structure.…”
Section: Results and Discussionmentioning
confidence: 99%
“…HAXPES have been used to investigate the chemical compositions and energy bands of metal-oxide-semiconductor (MOS) devices, which contain various oxides and semiconductor materials. [2][3][4][5] It has also been used to investigate voltage-induced changes in chemical bonding states in metal-insulator-metal (MIM) resistance-change memory. 6,7) In this work, we used HAXPES to investigate a recently proposed HfO 2 /SiO 2 -based interfacial-dipole-modulation (IDM) structure for MOS-type memory.…”
mentioning
confidence: 99%