Harvesting Electromagnetic Energy in the &lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;${V}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt;-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO<sub>2</sub>/Pt Metal–Insulator–Metal Diode

Aldrigo, Martino; Dragoman, Mircea; Modreanu, M.; Povey, Ian M.; Iordanescu, S.; Vasilache, D.; Dinescu, Adrian; Shanawani, Mazen; Masotti, Diego

doi:10.1109/ted.2018.2835138

Cited by 26 publications

(10 citation statements)

References 30 publications

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“…Gadalla et al [8] demonstrated an Au/0.7 nm CuO/Cu diode with β 0 = 2 A/W and R 0 = 500 Ω. A similar low R 0 of 405 Ω has been achieved by using Au/6 nm HfO 2 /Pt diode [89].…”

Section: Single Insulator Mim Diodesmentioning

confidence: 81%

“…Other oxides that have been considered for inclusion in MIM diodes include ZnO [81,82], V 2 O 5 [20,83], SiO 2 [84,85], Nb 2 O 5 [86,87], CuO [8], TiO 2 [69], Cr 2 O 3 [88], HfO 2 [89] and Sc 2 O 3 [90]. A simple process for fabricating planar-type MIM tunneling diodes using electron beam writing and a boiling water oxidation process has been proposed, achieving high diode sensitivity of −31 V −1 for Poly Si/PolySi [85] and −14.5 V −1 for PolySi/Au electrodes [84] but too high R 0 .…”

Section: Single Insulator Mim Diodesmentioning

confidence: 99%

“…The constraint of only growing a derivative oxide layer of the underlying polycrystalline metal can be resolved by directly depositing an insulator on the bottom metal electrode using different deposition techniques and thus facilitating the use of any type of bottom metal electrode irrespective of its native oxide formation properties. These deposition techniques include sputtering [14,17,20,27,28,45,51,59,74,80,83,90,97,98], electron beam evaporation [88] and atomic layer deposition [8,9,18,30,51,56,58,75,81,89,96,[99][100][101], as listed in Tables 2 and 3. Among these techniques, ALD offers the best quality oxides with low defect density, excellent conformality and uniformity.…”

Section: Permittivity and Scaling Issuesmentioning

confidence: 99%

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Oxides for Rectenna Technology

et al. 2021

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The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the engineering of a high-frequency rectifier that can convert terahertz and infrared alternating current (AC) signals to usable direct current (DC). The Metal Insulator Metal (MIM) diode has been considered as one of the ideal candidates for the rectenna system. Its unparalleled ability to have a high response time is due to the fast, femtosecond tunneling process that governs current transport. This paper presents an overview of single, double and triple insulator MIM diodes that have been fabricated so far, in particular focusing on reviewing key figures of merit, such as zero-bias responsivity (β0), zero-bias dynamic resistance (R0) and asymmetry. The two major oxide contenders for MInM diodes have been NiO and Al2O3, in combination with HfO2, Ta2O5, Nb2O5, ZnO and TiO2. The latter oxide has also been used in combination with Co3O4 and TiOx. The most advanced rectennas based on MI2M diodes have shown that optimal (β0 and R0) can be achieved by carefully tailoring fabrication processes to control oxide stoichiometry and thicknesses to sub-nanometer accuracy.

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“…Gadalla et al [8] demonstrated an Au/0.7 nm CuO/Cu diode with β 0 = 2 A/W and R 0 = 500 Ω. A similar low R 0 of 405 Ω has been achieved by using Au/6 nm HfO 2 /Pt diode [89].…”

Section: Single Insulator Mim Diodesmentioning

confidence: 81%

Section: Single Insulator Mim Diodesmentioning

confidence: 99%

Section: Permittivity and Scaling Issuesmentioning

confidence: 99%

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Oxides for Rectenna Technology

et al. 2021

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Section: Energy Harvesting Using Hfo2‐based Ferroelectricsmentioning

confidence: 99%

“…The first rectenna is based on the HfO 2 MIM diode and is shown in Figure . [ 45 ] We present integrated rectennas fabricated at the wafer level. The rectenna consists of a bow‐tie antenna integrated with an Au/HfO 2 /Pt MIM diode for electromagnetic harvesting in the 60 GHz bandwidth allocated to IoT.…”

Section: Energy Harvesting Using Hfo2‐based Ferroelectricsmentioning

confidence: 99%

HfO₂‐Based Ferroelectrics Applications in Nanoelectronics

Dragoman

Aldrigo

Dragoman

et al. 2021

Physica Rapid Research Ltrs

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In memoriam of Prof. Dan Dascalu IntroductionHafnium oxide (HfO 2 ) is the dielectric commonly used in fieldeffect transistors (FETs) fabricated in complementary metal oxide semiconductor (CMOS) technologies and, as such, retrieved in any very large-scale integrated (VLSI) circuits. Examples of such circuits include microprocessors or complex analog integrated circuits found in daily applications, for instance, in computers, smartphones, laptops, or incorporated in cars, airplanes, or medical equipments. Since the discovery of HfO 2 as a dielectric for modern integrated circuits, increasing its permittivity was a leading research issue in itself because higher permittivity values allow decreasing the effective oxide thickness (EOT), and so the leakage current; this is especially important when billions of Si FETs are integrated on a single chip. The solution found to boost the permittivity of HfO 2 is represented by structural phase transformations. [1] HfO 2 has its lowest electrical permittivity (ε r % 18) in its stable phase, which is the monoclinic phase. Higher permittivity values, of ε r % 27 in the cubic phase and ε r % 70 in the tetragonal phase, are achieved, nonetheless, in phases that are stable only at very high temperatures, exceeding 1700 C. The decrease in these temperatures is possible, however, by HfO 2 doping. Thus, the cubic and the tetragonal phases were first obtained at lower temperatures via Y doping [1] and, respectively, Si doping, [2] whereas a stable HfO 2 tetragonal phase at nearly room temperature was observed by growing HfO 2 via atomic layer deposition (ALD) and doping it with ZrO 2 . [3,4] As described in the recent review, [5] the stabilization of these phases is determined by the concentration of dopants, the annealing temperature, and the growing methods.These initial investigations focused on increasing the permittivity of HfO 2 lead eventually to the discovery of the orthorhombic phase of HfO 2 , which was associated with HfO 2 ferroelectricity. [6,7] This phase is obtained under different growth conditions in the presence of dopants, including those mentioned earlier, and requires strict control of dopant concentration, temperature, and mechanical strain. The most used orthorhombic HfO 2 -based ferroelectric, named further as Hf ZrO, is doped with Zr and is usually grown at the wafer level, up to 300 mm, using ALD. It thus benefits from the state-of-the-art CMOS technology. More recently, using Zr-doping and pulsed laser deposition (PLD), another rhombohedral phase of HfO 2 was discovered to be also ferroelectric. [7] The rhombohedral or orthorhombic Hf ZrO are ferroelectrics with similar electric performances; the origin of stable ferroelectricity in both cases being due to the induced strain between the top and/or down substrates sandwiching Hf ZrO. [8] Doping or strain application modifies the atomic structure of a material and can induce a phase transition, in particular can induce ferroelectricity in HfO 2 . Similarly, HfO 2 can transform into a weak magnetic material [9...

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Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W⁻¹ Based on Nitrogen‐Doped TiO_x and AlO_x Insulator Layers

Alshehri

Shahin

Mistry

et al. 2021

Adv Elect Materials

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Metal‐insulator‐insulator‐metal diodes based on nitrogen‐doped titanium dioxide (NTiOx) and aluminum oxide (NAlOx) are fabricated and characterized for the first time. Pt/TiOx‐NTiOx/Pt and Pt/TiOx‐NAlOx/Pt diodes with 30 nm of TiOx or NTiOx and 5 nm of NAlOx are compared to undoped Pt/TiOx/Pt and Pt/TiOx‐AlOx/Pt diodes of similar thickness. The nitrogen atoms are expected to modify the barrier heights and produce electron traps in the insulators. This changes the conduction mechanisms of the doped diodes, including the introduction of unidirectional, defect‐mediated Poole–Frenkel transport and trap‐assisted tunneling, which increase the performance of the doped diodes. The representative figures of merit observed for a Pt/TiOx‐NAlOx/Pt diode at 0.5 V include an asymmetry of 8.76 × 103, nonlinearity of 4, and zero‐bias responsivity of 22.3 A W−1. Zero‐bias responsivities as high as 36.8 A W−1 are obtained, which surpass the 19.4 A W−1 theoretical limit for Schottky diodes. Notably, this defect‐engineering approach is found to improve the figures of merit without an unwanted increase in diode resistance. A thinner Pt/NTiOx‐NAlOx/Al diode is also produced, which has a low zero‐bias resistance of 36 Ω, nonlinearity of 3.7, and zero‐bias responsivity of 1.7 A W−1.

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Harvesting Electromagnetic Energy in the <inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO₂/Pt Metal–Insulator–Metal Diode

Cited by 26 publications

References 30 publications

Oxides for Rectenna Technology

Oxides for Rectenna Technology

HfO₂‐Based Ferroelectrics Applications in Nanoelectronics

Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W⁻¹ Based on Nitrogen‐Doped TiO_x and AlO_x Insulator Layers

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Harvesting Electromagnetic Energy in the <inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO2/Pt Metal–Insulator–Metal Diode

Cited by 26 publications

References 30 publications

Oxides for Rectenna Technology

Oxides for Rectenna Technology

HfO2‐Based Ferroelectrics Applications in Nanoelectronics

Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W−1 Based on Nitrogen‐Doped TiOx and AlOx Insulator Layers

Contact Info

Product

Resources

About

Harvesting Electromagnetic Energy in the <inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>-Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO₂/Pt Metal–Insulator–Metal Diode

HfO₂‐Based Ferroelectrics Applications in Nanoelectronics

Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W⁻¹ Based on Nitrogen‐Doped TiO_x and AlO_x Insulator Layers