Reference Module in Materials Science and Materials Engineering 2016
DOI: 10.1016/b978-0-12-803581-8.09253-5
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Harsh Environment Materials

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Cited by 6 publications
(4 citation statements)
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References 218 publications
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“…To optimize the processes involved in LIGA techniques, the properties of the materials must be completely known, as they are strongly correlated to the parameters of the process. Furthermore, the properties of materials and surfaces must be tailored with respect to the mechanical and optical properties, thermal and electrochemical stability, and biocompatibility of the resulting devices [104]. Specifically, the substrate material employed for the LIGA process should be characterized by high resistance to dry, and wet etching, thermal stability, adhesion tendency to the substrate during electrodeposition, and insolubility of the unexposed resist during fabrication [103].…”
Section: Liga Techniquesmentioning
confidence: 99%
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“…To optimize the processes involved in LIGA techniques, the properties of the materials must be completely known, as they are strongly correlated to the parameters of the process. Furthermore, the properties of materials and surfaces must be tailored with respect to the mechanical and optical properties, thermal and electrochemical stability, and biocompatibility of the resulting devices [104]. Specifically, the substrate material employed for the LIGA process should be characterized by high resistance to dry, and wet etching, thermal stability, adhesion tendency to the substrate during electrodeposition, and insolubility of the unexposed resist during fabrication [103].…”
Section: Liga Techniquesmentioning
confidence: 99%
“…Specifically, it is possible to develop high precision and high aspect ratio (i.e., ratio between the height and the minimum lateral dimension) microstructures with flexible geometries and nanometer scale surface finishes (with a <50 nm surface roughness average value). Additionally, it allows for the use of a broad range of materials without introducing any thermal distortion and advanced scanner systems [81,102,[104][105][106]. However, several limitations must be considered, namely the radiation threat to the operator due to the use of high energy X-rays, the difficulties in managing the multistep process, and the high costs of the equipment [105].…”
Section: Liga Techniquesmentioning
confidence: 99%
“…High-κ dielectrics are commonly used for passivation layers in semiconductor devices [ 33 , 34 , 35 ] and solar cells [ 36 ]. Dielectrics are effective passivation materials as they are electrically and thermally insulating and can be easily scaled up for wafer-scale fabrication.…”
Section: Introductionmentioning
confidence: 99%
“…Future studies would provide the answer to this. More applications of SiC JFET in harsh, high temperature environment are expected in the future [1], [44], [68], however, according to [1] there is a need to research on the stability of the device in such environment, develop packages and other accessories that can stand such high temperature environment. For example, in a review of the development of 6H-SiC JFET by NASA for extreme temperature for application analog amplifier, digital logic gates ICs and amplifier circuits [12], reported the use of ceramic packages of Al 2 O 3 and gold metallization.…”
Section: Current Challenges and Areas For Futurementioning
confidence: 99%