Harmonically Pumped Stripline Down-Converter

Schneider, M.V.; Snell, W.W.

doi:10.1109/tmtt.1975.1128547

Cited by 88 publications

(14 citation statements)

References 9 publications

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“…Among aforementioned mixers, modern millimeter/terahertz SHP mixer firstly proposed by Cohn et al [11] and Schneider and Snell [12] in early 1970s is usually based on Schottky anti-parallel pair diode. The anti-parallel planar Schottky diode is a key component for SHP mixer, which can generate currents in twice of the LO frequency, further mix with the RF signal, as shown in Fig.…”

Section: Mixer Designmentioning

confidence: 99%

380 GHZ Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

Yang¹,

Wang²,

Wang³

et al. 2014

PIER Letters

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Abstract-This paper presents the design and fabrication of a feed horn antenna integrated fix-tuned 380 GHz sub-harmonically pumped mixer, based on planar GaAs air-bridged Schottky anti-parallel diode from Rutherford Appleton Laboratory. The diode was designed and fabricated by millimeter technology group, Rutherford Appleton Laboratory, UK. The mixer's circuit configuration and cavity block are realized by joint simulation of ANSOFT's three-dimensional full-wave electromagnetic simulation software HFSS and AGILENT's circuit simulation software ADS. The mixer circuit is fully integrated with the microstrip circuit and the flip-chipped diode on suspended 50 µm thick quartz substrate, and whole fixed-tuned mixer cavity block is integrated with RF feed horn antenna, using least parts to minimize the cost, as well as maximize its potential convenience for circuit and block manufacture. The simulation and test investigation have good agreement and show state-of-the-art results. The experimental results show that over an IF band of 2.5-3.5 GHz, the mixer's conversion loss is lower than 10 dB with mean value 9 dB, and the mixer's equivalent noise temperature is less than 3000 K with mean value 2000 K. Besides, mixer equivalent noise temperature curve's variation trends show good consistency with conversion loss curve.

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Section: Mixer Designmentioning

confidence: 99%

380 GHZ Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

Yang¹,

Wang²,

Wang³

et al. 2014

PIER Letters

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“…20 where the diodes are mounted In shunt with the TE4 suspended stripline. This was done folloving references (9] to [12]. The problem of grounding the diodes is nov found at tuo different locations, and no solution was found before this topology was abandoned.…”

Section: Other Approaches Triedmentioning

confidence: 99%

EHF Test-Bed Subharmonic Mixer.

Aghion¹

1981

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JULY 1981Appowd fr public reklmw, dmribu ion unlimited LEXINGTON MASSACHUSETTS ABSTRACTThe development, design and construction of a subharmonically pumped mixer at 44 GHz using GaAs Schottky beam lead diodes is discussed. A simplified theory is used to derive a three-port equivalent circuit of the complete mixer which includes effects such as diode parasitics and filter characteristics.Specific design criteria are developed at each of the three mixer signal frequencies, RF, LO and IF, which relate this equivalent circuit to the observed performance.

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“…14,15 The diodes are thermocompression-bonded to millimeter-wave thin-film circuits in either the orthomode double balanced down-con verter (four diodes) 16 or the half-frequency pumped down-converter (two diodes). [17][18][19] Typical diodes selected for these circuits have a total ca pacitance at zero volts less than 0.08 pF and an excess series resistance (ΔSF). calculated from the dc forward-bias junction characteristics, less than 8 Ω.…”

Section: Semiconductor Devices 2127mentioning

confidence: 99%

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

Dunn¹,

Petersen²,

Redline³

1977

Bell System Technical Journal

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Design, fabrication, performance, and reliability information is provided for three types of millimeter-wave diodes developed to operate over the 40-110 GHz WT4 band. A family of silicon I MP ATT diodes generate the transmitter and local-oscillator power. These diodes use an ion-implanted double drift impurity profile. A hermetically sealed package was developed to achieve high reliability. A diamond heat sink provides a low thermal resistance. A silicon PIN subnanosecond switching diode phase modulates the transmitted power. The passivated mesa of the PIN diode chip is fabricated from thin, high-resistivity epitaxial material to achieve low capacitance and fast switching. A gallium arsenide Schottky-barrier mixer diode down-converts the signal in the receiver. The beam-lead Schottky diode is fabricated using mo lecular beam epitaxy, which provides a novel junction-isolation tech nique. Also, a brief description is given of the salient features of other active devices which operate in the IF (1.371 GHz) and baseband (dc to 300 MHz) circuitry. They consist of a family of both transistors and diodes (step recovery device, PIN variolosser, and Schottky mixer).

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Harmonically Pumped Stripline Down-Converter

Cited by 88 publications

References 9 publications

380 GHZ Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

380 GHZ Sub-Harmonically Pumped Mixer Based on Anti-Parallel Planar Schottky Diode

EHF Test-Bed Subharmonic Mixer.

WT4 Millimeter Waveguide System: Semiconductor Devices for the WT4 Repeater

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