Hardware Security Primitives Using Passive RRAM Crossbar Array

Singh, Simranjeet; Zahoor, Furqan; Rajendran, Gokul; Patkar, Sachin B.; Chattopadhyay, Anupam; Merchant, Farhad

doi:10.1145/3566097.3568348

Cited by 4 publications

(1 citation statement)

References 27 publications

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“…All these IoT devices requires encryption and on chip authentication, which can be accomplished using secret key. Physical Unlconable Function (PUF) is a cryptographic primitive, which generate output from manufacturing variations [202][203][204]. The manufacturing variations causes the variations in the delay, voltage and current at a node.…”

Section: Cntfet-based Physical Unclonable Functionmentioning

confidence: 99%

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

et al. 2023

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The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling limits. This has led to significant interest among the researchers to examine novel device technologies utilizing different materials to sustain the scaling limits of the modern day integrated circuits. Among various material alternatives, carbon nanotubes (CNTs) have been extensively investigated owing to their desirable properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs form the most important component of CNTFETs, which are being viewed as the most feasible alternatives for the replacement of silicon transistors. In this manuscript, detailed description of the recent advances of state of the art in the field of CNTFETs with emphasis on the most broadly impactful applications for which they are being employed is presented. The future prospects of CNTFETs while considering aggressively scaled transistor technologies are also briefly discussed.

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Section: Cntfet-based Physical Unclonable Functionmentioning

confidence: 99%

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

et al. 2023

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Spinel ferrites for resistive random access memory applications

Gayakvad,

Somdatta,

Mathe

et al. 2023

emergent mater.

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Cutting edge science and technology needs high quality data storage devices for their applications in artificial intelligence and digital industries. Resistive random access memory (RRAM) is an emerging nonvolatile memory used for recording and reproducing the digital information. Earlier studies on RRAM applications suggest that spinel ferrite is a potential material. We envisage that the spinel ferrite prepared by a particular route, namely spin coating, will in future optimize the essential parameters for optimal functioning of RRAM. An assertion to our assumptions, few researchers have already obtained important findings for spin coated spinel ferrites. Spin coated spinel ferrites, namely zinc ferrite, nickel ferrite, cobalt ferrite and mixed spinel ferrites, have been investigated for their applications as switching layers in RRAM devices. Particularly, spin coated cobalt ferrite, nickel ferrite and doped nickel ferrite were widely used as resistive switching layers. However, it is noticed that there is a tremendous scope for synthesis and resistive switching characterization of spin coated pure and doped zinc ferrite. Proper doping of special element into spinel ferrite can enhance the resistive switching performance of RRAM devices. Insertion of nano structures and metal layers within switching layer uplifts the performance of spin coated spinel ferrite-based RRAM devices. Active layer in RRAM device synthesized by spin coating technique exhibited good resistive switching properties, namely retention of $$10^{3}$$ 10 3 to $$10^{5}$$ 10 5 s, endurance in the range of $$10^{2}$$ 10 2 to 22,500 cycles and memory window of $$10^{2}$$ 10 2 to $$10^{6}$$ 10 6 . This review article accounts for the optimized parameters obtained especially for the spinel ferrite-based active material synthesized by spin coating justifying the results with appropriate theory. A good co-relation between synthesis parameters and the RRAM functional parameter is separately discussed at the end of review article.

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