Hard-Gap Spectroscopy in a Self-Defined Mesoscopic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>In</mml:mi><mml:mi>As</mml:mi></mml:mrow></mml:math>/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Al</mml:mi></mml:math>Nanowire Josephson Junction

Zellekens, Patrick; Deacon, Russell; Perla, Pujitha; Fonseka, H. Aruni; Mörstedt, Timm; Hindmarsh, Steven A.; Bennemann, Benjamin; Lentz, Florian; Lepsa, Mihail Ion; Sanchez, Ana M.; Grützmacher, Detlev; Ishibashi, Koji; Schäpers, Thomas

doi:10.1103/physrevapplied.14.054019

Cited by 8 publications

(11 citation statements)

References 41 publications

(70 reference statements)

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“…In order to demonstrate the feasibility and performance of our flip-chip approach, we investigated the coupling of the resonator to the device chip. Furthermore, we present single-tone as well as twotone spectroscopic measurements of an epitaxially grown InAs/Al half shell nanowire with a shadow mask defined Josephson junction [27,28]. We note that a similar flipchip method has recently been reported for Josephson junction detector based spectrometers [29].…”

mentioning

confidence: 85%

“…The superconducting Nb resonator is connected to a directional coupler, thus providing the pump tone as the input signal and feeding the reflected signal back to the measurement setup. The mesoscopic nanowire Josephson junction is based on an epitaxial Al-InAs half-shell nanowire Josephson junction device that has been prepared by utilizing an in-situ shadow evaporation process [27]. In Fig.…”

Section: Flip-chip Techniquementioning

confidence: 99%

“…[20,34] (see Supplementary Information). Features can also be well fit using the short channel analytical solution for the Andreev state energies if the gap ∆ is taken as a free parameter which is reduced below the expected bulk gap (assumed to be ∆ Al ∼ 180 µeV based on previous dc transport studies [27]). We note both fitting methods produce comparable results in the measurement parameters space but differ at higher pump frequencies.…”

Section: Spectroscopic Measurementsmentioning

confidence: 99%

“…The junctions were fabricated by employing a fully in-situ shadow evaporation scheme, as reported in Ref. [27]. The InAs nanowire has a diameter of 90 nm and a length of 6 µm.…”

Section: B Fabrication Of the Device Chip And The Nanowire Josephson ...mentioning

confidence: 99%

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Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Zellekens¹,

Deacon²,

Perla³

et al. 2021

Preprint

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Josephson junctions based on semiconductor nanowires are potential building blocks for electrically tunable qubit structures, e.g. the gatemon or the Andreev qubit. However, an actual realization requires the thorough investigation of the intrinsic excitation spectrum. Here, we demonstrate the fabrication of low-loss superconducting microwave circuits that combine high quality factors with a well-controlled gate architecture by utilizing a flip-chip approach. This platform is then used to perform single-tone and two-tone experiments on Andreev states in in-situ grown InAs/Al core/halfshell nanowires with shadow mask defined Josephson junctions. In gate-controlled and flux-biased spectroscopic measurements we find clear signatures of single quasiparticle as well as quasiparticle pair transitions between discrete Andreev bound states mediated by photon-absorption. Our experimental findings are supported by simulations that show that the junction resides in the intermediate channel length regime.

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mentioning

confidence: 85%

Section: Flip-chip Techniquementioning

confidence: 99%

Section: Spectroscopic Measurementsmentioning

confidence: 99%

“…The junctions were fabricated by employing a fully in-situ shadow evaporation scheme, as reported in Ref. [27]. The InAs nanowire has a diameter of 90 nm and a length of 6 µm.…”

Section: B Fabrication Of the Device Chip And The Nanowire Josephson ...mentioning

confidence: 99%

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Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Zellekens¹,

Deacon²,

Perla³

et al. 2021

Preprint

Self Cite

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“…However, recently it was demonstrated that closely separated superconducting electrodes can also be achieved by shadow evaporation technique, i.e. either by using a nanowire which crosses another [25][26][27] or using a patterned, suspended SiO 2 layer as a shadow or stencil mask. 18,22 All of these methods, have a common trait to potentially reach the so-called short channel limit, in which the current through the device is only carried by a single Andreev bound state.…”

Section: Introductionmentioning

confidence: 99%

Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

et al. 2021

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Shadowed versus Etched Superconductor–Semiconductor Junctions in Al/InAs Nanowires

Sestoft,

Marnauza,

Olsteins

et al. 2024

Nano Lett.

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Hybrid semiconductor−superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.

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Hard-Gap Spectroscopy in a Self-Defined MesoscopicInAs/AlNanowire Josephson Junction

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Cited by 8 publications

References 41 publications

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Microwave spectroscopy of Andreev states in InAs nanowire-based hybrid junctions using a flip-chip layout

Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

Shadowed versus Etched Superconductor–Semiconductor Junctions in Al/InAs Nanowires

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