Hard boron oxide thin-film deposition using electron cyclotron resonance microwave plasmas

Gorbatkin, S. M.; Rhoades, Robert L.; Tsui, Ting Y.; Oliver, W. C.

doi:10.1063/1.112598

Cited by 32 publications

(16 citation statements)

References 12 publications

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“…2 rf magnetron sputtering of a BO 0.21 C 0.52 target in an Ar/O 2 atmosphere at a substrate temperature from 300 to 600°C was reported to yield BO 0.17 C 0.21 films. 2 rf magnetron sputtering of a BO 0.21 C 0.52 target in an Ar/O 2 atmosphere at a substrate temperature from 300 to 600°C was reported to yield BO 0.17 C 0.21 films.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and mechanical properties of boron suboxide thin films

Mušić

Schneider²,

Kugler

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Boron suboxide thin films have been deposited on Si(100) and graphite substrates by reactive rf magnetron sputtering of a sintered B target in an Ar/O2 atmosphere. X-ray photoelectron spectroscopy, elastic recoil detection analysis, Fourier transform infrared spectroscopy, x-ray diffraction, and transmission electron microscopy were applied to study the influence of the O2 partial pressure on the film composition and microstructure. BOx thin films with x=[0.02–0.21] and a C impurity of approximately 0.3 at. % were formed by varying the O2 partial pressure from 7.2×10−7 to 3.3×10−2 Pa. All films were amorphous and the films with x⩾0.15 contained boric acid on the surface due to a probable chemical reaction with water in laboratory atmosphere. Mechanical properties were evaluated by nanoindentation. As x was increased from 0.02 to 0.21, the elastic modulus decreased from 272 to 109 GPa. The change in the elastic modulus was attributed to the O concentration variations.

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Section: Introductionmentioning

confidence: 99%

Synthesis and mechanical properties of boron suboxide thin films

Mušić

Schneider²,

Kugler

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…456,457 These compounds are structurally distinct from B 2 O 3 , BN, and BCN where B is incorporated in either trigonal/sp 2 or tetrahedral/sp 3 linkages with O, N and C. 458 Due to the strong covalent bonding forming the B 12 icosahedra, B 4 C and BO x materials exhibit extremely high values of Young's modulus (>300 GPa) and hardness (>30 GPa) with relatively low values of dielectric constant (≤5). 454,455,459 PECVD a-B 4-5 C:H films have been reported with even lower optical dielectric constants (3-4), 460 and still compelling hardness and mass density values of ∼ 8 GPa 461 and 1.5-1.8 g/cm 3 , 462 respectively. These values are extremely compelling for low-k DB applications, and further optimization of a-B x C:H materials for low-k applications can be anticipated due to the ability of the B 12 icosahedra to arrange themselves in many different distorted arrangements 463 similar to SiO 4 tetrahedra in SiO 2 and low-k a-SiOC:H materials.…”

mentioning

confidence: 99%

“…454,455 At the atomic level, these materials are unique in that they are typically composed of interlinked B 12 icosahedra with C or O either substituting for B in the icosahedra or forming intra-icosahedra linkages. 456,457 These compounds are structurally distinct from B 2 O 3 , BN, and BCN where B is incorporated in either trigonal/sp 2 or tetrahedral/sp 3 linkages with O, N and C. 458 Due to the strong covalent bonding forming the B 12 icosahedra, B 4 C and BO x materials exhibit extremely high values of Young's modulus (>300 GPa) and hardness (>30 GPa) with relatively low values of dielectric constant (≤5).…”

mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

131

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…The 210 nm thick film contained 11 atomic % oxygen as determined by RBS methods. Details of the system and processing conditions are given elsewhere [6].…”

Section: Methodsmentioning

confidence: 99%

Nanoindentation and Nanoscratching of Hard Coating Materials for Magnetic Disks

Tsui

Pharr

Oliver³

et al. 1994

MRS Proc.

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Nanoindentation and nanoscratching experiments have been performed to assess the mechanical and tribological behavior of three thin film materials with potential application as wear resistant coatings for magnetic disk storage: (1) hydrogenated-carbon (CHx); (2) nitrogenated-carbon (CNx); and (3) boron suboxide (BOX). The hardness and elastic modulus were measured using nanoindentation. Ultra-low load nanoscratching tests were performed to assess the relative scratch resistance of the films and measure their friction coefficients. The mechanical and tribological performance of the three materials are discussed and compared.

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Hard boron oxide thin-film deposition using electron cyclotron resonance microwave plasmas

Cited by 32 publications

References 12 publications

Synthesis and mechanical properties of boron suboxide thin films

Synthesis and mechanical properties of boron suboxide thin films

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Nanoindentation and Nanoscratching of Hard Coating Materials for Magnetic Disks

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