Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters

Matsumoto, Takahiro; Iwayama, Sho; Saito, Takao; Kawakami, Yasuyuki; Kubo, Fumio; Amano, Hiroshi

doi:10.1364/oe.20.024320

Cited by 37 publications

(45 citation statements)

References 28 publications

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“…Although the physical mechanism behind such a high efficiency is not clear, the result evidences good prospects for this kind of mid‐UV sources. Another very encouraging result was demonstrated by Matsumoto et al , who have developed a portable device with P out = 20 mW at 240 nm and the efficiency of 4%. The 60 nm‐thin AlGaN/AlN MQW structure was grown atop of a very thick (15 μm) AlN buffer by high‐temperature metal‐organic vapor phase epitaxy (MOVPE).…”

Section: Introductionmentioning

confidence: 87%

“…In addition, in comparison with LEDs, a much thicker active region defined by the e‐beam energy can be employed in e‐beam pumped (EBP) sources to yield higher P out . Several groups have reported on nitride semiconductor EBP light sources . Recently, a 100 mW output power with an efficiency exceeding 40% has been reported for EBP AlGaN multiple quantum wells (MQW) .…”

Section: Introductionmentioning

confidence: 99%

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E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW

Ivanov

Jmerik

Нечаев

et al. 2015

Physica Status Solidi (a)

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Phone: þ7 812 292 7124, Fax: þ7 812 297 1017 A 60 mW output power has been achieved in mid-UV (l ¼ 270 nm) spontaneous sources with electron-beam pulsescanning pumping, fabricated from AlGaN MQW heterostructures grown by PA MBE on c-Al 2 O 3 substrates. Under the CW pumping at much lower excitation power density the mid-UV sources demonstrate a 4.7 mW output power. In that regime the power efficiency of the structures is about 0.24%, while their internal quantum efficiency is estimated to be as high as 50%.

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Section: Introductionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW

Ivanov

Jmerik

Нечаев

et al. 2015

Physica Status Solidi (a)

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show abstract

“…A promising approach that dramatically improves the light output power is electron‐beam (e‐beam) pumping, especially for the short‐wavelength UVC spectral range . This approach allows one to bypass the need for p‐type or n‐type injection layers and, thus, can largely increase the carrier injection efficiency.…”

mentioning

confidence: 99%

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

Wang

Rong

Иванов

et al. 2019

Advanced Optical Materials

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which are environmentally friendly and enable portability and high efficiency. Up to date, great progress has been made on the UVC light-emitting diodes (LEDs) by using active regions of AlGaN multiple quantum wells (MQWs) .[8-14] However, the optical output power of current UVC LEDs drops significantly as the light emission wavelength gets shorter. Those LEDs suffer from poor hole injection efficiency in high-Al-content p-type AlGaN, low internal quantum efficiency (IQE) caused by large-lattice-mismatch heteroepitaxy, and strong quantum-confined Stark effect (QCSE), as well as the absorption by the nontransparent GaN contact layers. [15][16][17] A promising approach that dramatically improves the light output power is electron-beam (e-beam) pumping, especially for the short-wavelength UVC spectral range. [3,[18][19][20][21][22][23][24] This approach allows one to bypass the need for p-type or n-type injection layers and, thus, can largely increase the carrier injection efficiency. This provides a unique advantage over conventional LEDs at UVC range, since the p-type doping for high-Al-content AlGaN is High-output-power electron-beam (e-beam) pumped deep ultraviolet (DUV) light sources, operating at 230-270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high-quality thermally annealed AlN templates by metal-organic chemical vapor deposition. Owing to the reduced dislocation density, large electron-hole overlap, and efficient carrier injection by e-beam, the DUV light sources demonstrate high output powers of 24.8, 122.5, and 178.8 mW at central wavelengths of 232, 244, and 267 nm, respectively. Further growth optimization and employing an e-gun with increased beam current lead to a record output power of ≈2.2 W at emission wavelength of ≈260 nm, the key wavelength for water sterilization. This work manifests the practical levels of high-output-power DUV light sources operated by using e-beam pumping method. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adom.201801763.Solid-state deep ultraviolet (DUV) optoelectronic devices in the spectral range of 200-280 nm, i.e., ultraviolet-C (UVC), have attracted much attention for their wide applications in sterilization, medical treatment, security, solar-blind photodetection, and so on. [1][2][3][4][5][6][7] Currently, Al(Ga)N material system is the most promising candidate for solid-state UVC light sources

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“…In comparison with conventional AlGaN QWs, such quasi‐2D GaN layers are formed by sub‐monolayer digital alloying (SDA) technique, and show the following advantages: (1) the carrier localization is greatly promoted both in vertical and lateral directions; (2) the UV light emission along c ‐axis (TE, E ⊥ c ) is predicted to be dominant, and (3) the crystalline quality should be good since the quasi‐2D GaN layers are coherently grown on the AlGaN layers and hence free of misfit dislocations . Moreover, to avoid the difficulty in p‐type doping of high‐Al‐content AlGaN and UV light absorption by p‐type GaN, an electron‐beam (e‐beam) pumping method is used instead of conventional electrical injection as reported previously . As a result, an amazing output power of ≈160 mW at a wavelength of 285 nm under pulse‐scan mode has been achieved.…”

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confidence: 99%

High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

et al. 2016

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Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.

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Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters

Cited by 37 publications

References 28 publications

E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW

E‐beam pumped mid‐UV sources based on MBE‐grown AlGaN MQW

Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt

High‐Output‐Power Ultraviolet Light Source from Quasi‐2D GaN Quantum Structure

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