2019
DOI: 10.1039/c9cp03822a
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Halogenation of SiGe monolayers: robust changes in electronic and thermal transport

Abstract: Achieving benchmark enhancement in the thermoelectric figure of merit through the fluorination of SiGe monolayers at room temperature.

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Cited by 16 publications
(13 citation statements)
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“…The electrical conductivity relies on the relaxation time, which is constant under the solution of the Boltzmann transport equation and therefore, deformation potential theory has been employed to obtain the relaxation time of charge carriers separately. 68–71 Deformation potential theory appends the calculation of charge carrier mobility using the following expression which is widely utilized to derive the relaxation time 68–74 where C 2D is the two-dimensional elastic constants derived from the second-order derivative of the total energy as a function of applied strain, and m * is the effective mass of the charge carrier obtained from the band structure along the x and z -directions. E 1 is the deformation potential constants defined from the slope of the band edges with respect to the applied strain.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The electrical conductivity relies on the relaxation time, which is constant under the solution of the Boltzmann transport equation and therefore, deformation potential theory has been employed to obtain the relaxation time of charge carriers separately. 68–71 Deformation potential theory appends the calculation of charge carrier mobility using the following expression which is widely utilized to derive the relaxation time 68–74 where C 2D is the two-dimensional elastic constants derived from the second-order derivative of the total energy as a function of applied strain, and m * is the effective mass of the charge carrier obtained from the band structure along the x and z -directions. E 1 is the deformation potential constants defined from the slope of the band edges with respect to the applied strain.…”
Section: Resultsmentioning
confidence: 99%
“…The electrical conductivity relies on the relaxation time, which is constant under the solution of the Boltzmann transport equation and therefore, deformation potential theory has been employed to obtain the relaxation time of charge carriers separately. [68][69][70][71] Deformation potential theory appends the calculation of charge carrier mobility using the following expression which is widely utilized to derive the relaxation time [68][69][70][71][72][73][74]…”
Section: Thermoelectric Propertiesmentioning
confidence: 99%
“…The carrier relaxation times (τ) as a function of strain were computed from first principles calculations using the relation , where μ, m *, and e are the carrier mobility, the effective mass of charge carriers, and the charge of the electron, respectively. We employed the commonly used formulation for charge carrier mobility given as follows: , where C 2D refers to the in-plane stiffness constant and E 1 is the deformation potential of the relevant band edge. Details regarding calculation of these quantities can be found in the Computational Methods section.…”
Section: Resultsmentioning
confidence: 99%
“…The Broyden-Fletcher-Goldfarn-Shanno (BFGS) (Head and Zerner, 1985) algorithm is utilized to perform the structural optimization of the silica unit cell. BFGS has been widely used to optimize the electronic structure of a wide range of materials in DFT calculations (Han et al, 2019;Sharma et al, 2019;Neupane and Adhikari, 2020).…”
Section: Computational Methodologymentioning
confidence: 99%