Hall mobility of degenerate semiconductors

Abstract

The dependence of HALL mobility of carriers on impurity content has been theoretically investigated for degenerate semiconductors, taking scattering by lattice vibrations as well as ionized impurities into account. The scattering due to optical modes of lattice vibrations has been neglected, for the sake of simplicity of cal-culations_ This omission is not serious at temperatures, when the impurity scattering is important.