Hall mobility of amorphous Ge2Sb2Te5

Baily, S. A.; Emin, David; Li, Heng

doi:10.1016/j.ssc.2006.05.031

Cited by 45 publications

(40 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our case we did not observe A to be close to unity. The constant A is negative for all studied films, in accord with earlier observations on negative A values found for GeTe and Ge-Sb-Te compounds [15,16]. It is plausible to explain charge carrier transport in the studied entities in terms of two type charge carrier conductivity.…”

Section: Methodssupporting

confidence: 90%

“…1(a)]. In the case of GeTe, a negative sign for the majority carriers follows from the thermopower data for the film implanted with Bi at a dose of 2x10 16 cm -2 , as shown by () in Fig.1 (d). In the case of Ge-Sb-Te, the implantation dose of 2x10 16 cm -2 causes almost a complete removal of the films due to sputtering by the impinging ions.…”

Section: Methodsmentioning

confidence: 81%

“…In the case of GeTe, a negative sign for the majority carriers follows from the thermopower data for the film implanted with Bi at a dose of 2x10 16 cm -2 , as shown by () in Fig.1 (d). In the case of Ge-Sb-Te, the implantation dose of 2x10 16 cm -2 causes almost a complete removal of the films due to sputtering by the impinging ions. The increase in the resistivity of the Ge-Sb-Te films is thought to be related to this partial film removal at implantation doses of Bi higher than 1x10 15 [14].…”

Section: Methodsmentioning

confidence: 88%

“…Ion implantation of Bi was done using a Danfysik ion implanter with doses in the range of 1x10 14 -1x10 16 cm -2 at energy of 190 keV. The samples for the current-voltage (IV) and capacitance-voltage (CV) measurements were completed by depositing gold electrodes of area (1.75-2.25)×10 −2 cm 2 .…”

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

et al. 2014

View full text Add to dashboard Cite

Section: Methodssupporting

confidence: 90%

Section: Methodsmentioning

confidence: 81%

Section: Methodsmentioning

confidence: 88%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

et al. 2014

View full text Add to dashboard Cite

“…Crystallite size in the annealed films was estimated at ~10 nm using x-ray diffraction. Electronic properties of these films were evaluated previously [7], the results being consistent with others [14,15]. Surface roughness of films, e.g., with thickness of 100 nm was smaller than ~5 nm, which was important to production of nano-scale marks.…”

Section: Methodssupporting

confidence: 83%

Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Tanaka

2007

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Electrical nano-scale crystallization and amorphization in amorphous and crystalline Ge 2 Sb 2 Te 5 films have been studied using scanning probe microscopes. In scanning tunneling microscopes, the phase changes can be induced, not by tunneling currents, but by conducting currents flowing through contacted probes. In an atomic force microscope, metallic cantilevers can produce phase-change marks with minimal sizes of ~10 nm. The crystallization and amorphization processes show different dependences upon thickness of Ge 2 Sb 2 Te 5 films. These features are discussed from thermo-dynamical and microscopic structural points-of-view.

show abstract

Design Rules for Phase‐Change Materials in Data Storage Applications

2011

View full text Add to dashboard Cite

Phase-change materials can rapidly and reversibly be switched between an amorphous and a crystalline phase. Since both phases are characterized by very different optical and electrical properties, these materials can be employed for rewritable optical and electrical data storage. Hence, there are considerable efforts to identify suitable materials, and to optimize them with respect to specific applications. Design rules that can explain why the materials identified so far enable phase-change based devices would hence be very beneficial. This article describes materials that have been successfully employed and dicusses common features regarding both typical structures and bonding mechanisms. It is shown that typical structural motifs and electronic properties can be found in the crystalline state that are indicative for resonant bonding, from which the employed contrast originates. The occurence of resonance is linked to the composition, thus providing a design rule for phase-change materials. This understanding helps to unravel characteristic properties such as electrical and thermal conductivity which are discussed in the subsequent section. Then, turning to the transition kinetics between the phases, the current understanding and modeling of the processes of amorphization and crystallization are discussed. Finally, present approaches for improved high-capacity optical discs and fast non-volatile electrical memories, that hold the potential to succeed present-day's Flash memory, are presented.

show abstract

Hall mobility of amorphous Ge2Sb2Te5

Cited by 45 publications

References 20 publications

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

Smallest (∼10nm) phase-change marks in amorphous and crystalline Ge2Sb2Te5 films

Design Rules for Phase‐Change Materials in Data Storage Applications

Contact Info

Product

Resources

About