Hall Mobility in SrTi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Frederikse, H. P. R.; Hosler, W. R.

doi:10.1103/physrev.161.822

Cited by 254 publications

(198 citation statements)

References 26 publications

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“…The dependence of the spin lifetime on the carrier density and mobility are shown in Fig. 5b,c, respectively, for data corresponding to a bias voltage of B À 0.8 V. The mobility of La-doped STO decreases with increasing carrier concentration due to increased ionic impurity scattering 5,27 . The higher mobility of the La doped as compared with the Nb-doped STO can be attributed to the very high structural quality of the STO films 5 .…”

Section: Discussionmentioning

confidence: 99%

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

et al. 2013

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There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to B100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti 3 þ . Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

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Section: Discussionmentioning

confidence: 99%

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

et al. 2013

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Section: Introductionmentioning

confidence: 99%

“…Among all oxides, SrTiO 3 (STO) is particularly appealing because of its multifunctional character. It is a wide band gap semiconductor (3.2 eV) that becomes a high mobility metal [6] or even superconducting [7] upon oxygen vacancy doping.Stoichiometric STO is also at the fringe of ferroelectricity and its large dielectric permittivity, tunability and low microwave loss, makes it a good candidate for tunable microwave devicesThe potential of oxides is further enlarged by the fascinating properties of their interfaces, epitomized by the observation of ferromagnetism at the interface between two antiferromagnets [9] or of the quantum Hall effect in two-dimensional (2D) ZnO-based structures [10]. Recently, an electron gas with high electron mobility at low temperature (in the 10 4 cm 2 /Vs range) has been reported in heterostructures combining STO with LaAlO 3 (LAO), another band insulator [1].…”

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confidence: 99%

Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures

Basletić

Maurice²,

Carrétéro³

et al. 2008

Nature Mater

427

386

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At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO 3 /SrTiO 3 system [1].While this state has been predicted [2] and reported [3,4] to be confined at the interface, some works indicate a much broader spatial extension [5], thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO 3 /SrTiO 3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO 3 to a few nanometers next to the LaAlO 3 /SrTiO 3 interface.Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system 2 Due to the richness of their intrinsic properties oxide materials can bring novel functionalities to electronics. Among all oxides, SrTiO 3 (STO) is particularly appealing because of its multifunctional character. It is a wide band gap semiconductor (3.2 eV) that becomes a high mobility metal [6] or even superconducting [7] upon oxygen vacancy doping.Stoichiometric STO is also at the fringe of ferroelectricity and its large dielectric permittivity, tunability and low microwave loss, makes it a good candidate for tunable microwave devicesThe potential of oxides is further enlarged by the fascinating properties of their interfaces, epitomized by the observation of ferromagnetism at the interface between two antiferromagnets [9] or of the quantum Hall effect in two-dimensional (2D) ZnO-based structures [10]. Recently, an electron gas with high electron mobility at low temperature (in the 10 4 cm 2 /Vs range) has been reported in heterostructures combining STO with LaAlO 3 (LAO), another band insulator [1]. Since its discovery by Ohtomo and Hwang [1], this unusual metallic state has been the object of many studies [2,3,4,5,11,12,13,14,15,16,17,18].Recent results include a two-dimensional superconducting behaviour at the LAO/STO interface below 200 mK [19], and indications of a ferromagnetic state below ~1K [20].The arguments invoked to explain the metallic state observed in such LAO/STO samples have been dual. A first interpretation relies on the transfer of a ½ e charge per unit cell at the interface, because of the polar discontinuity between positively charged LaO and neutral TiO 2 sub-planes [11]. In this picture a sheet carrier density n sheet ≈ 3.3 10 14 cm -2 is expected. However, in many cases the reported values of n sheet exceed this density by orders of magnitude [1,5,17]. This leads to another interpretation relying on the creation of oxygen vacancies in the STO substrate during the growth of the LAO film, which dopes the STO with electrons and makes it a high-mobility meta...

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“…The polar catastrophe can be alleviated by transferring charge to the interface-manifest as either the presence of an extra half of an electron or hole at an n-type (LaO/TiO 2 ) and p-type (MnO 2 /SrO) interface, respectively-yet also through cation or oxygen vacancies and/or atomic displacements 21 . Note that oxygen vacancies in SrTiO 3 , for example, can give rise to itinerant electrons 22,23 yet can only cancel the polar catastrophe for p-type interfaces 20 . For metallic and insulating films, the nature of the interfacial reconstructions should be qualitatively different as the electrostatic boundary conditions and compensation mechanisms are distinct.…”

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confidence: 99%

Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal–insulator transition

et al. 2014

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Electronic changes at polar interfaces between transition metal oxides offer the tantalizing possibility to stabilize novel ground states yet can also cause unintended reconstructions in devices. The nature of these interfacial reconstructions should be qualitatively different for metallic and insulating films as the electrostatic boundary conditions and compensation mechanisms are distinct. Here we directly quantify with atomic-resolution the charge distribution for manganite-titanate interfaces traversing the metal-insulator transition. By measuring the concentration and valence of the cations, we find an intrinsic interfacial electronic reconstruction in the insulating films. The total charge observed for the insulating manganite films quantitatively agrees with that needed to cancel the polar catastrophe. As the manganite becomes metallic with increased hole doping, the total charge build-up and its spatial range drop substantially. Direct quantification of the intrinsic charge transfer and spatial width should lay the framework for devices harnessing these unique electronic phases.

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Hall Mobility in SrTiO3

Cited by 254 publications

References 26 publications

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

Mapping the spatial distribution of charge carriers in LaAlO3/SrTiO3 heterostructures

Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal–insulator transition

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