Hall Mobility Enhancement in AgBiTe<sub>2</sub>–Ag<sub>2</sub>Te Composites

Sakakibara, T.; Takigawa, Yasuo; Kurosawa, Kou

doi:10.1143/jjap.41.2842

Cited by 3 publications

(5 citation statements)

References 6 publications

(18 reference statements)

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“…Figure c shows the temperature dependence of the calculated n and μ. Maximum carrier mobility is obtained at 10 K as μ ∼ 2.2 × 10 4 cm 2 /(V s), which is greater than the highest value of 4 × 10 3 cm 2 /(V s) reported so far. , In general, materials with high mobility would lead to excellent thermoelectric power and shows quantum mechanical effect such as the SdH oscillation. , …”

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confidence: 75%

“…Maximum carrier mobility is obtained at 10 K as μ ∼ 2.2 × 10 4 cm 2 /(V s), which is greater than the highest value of 4 × 10 3 cm 2 /(V s) reported so far. 24,25 In general, materials with high mobility would lead to excellent thermoelectric power and shows quantum mechanical effect such as the SdH oscillation. 26,27 Figure 4d shows the MR curve of the Ag 2 Te NPL device at 2 K with a magnetic field aligned perpendicular to both the current direction and the (001) surface of the NPL, in which the MR oscillation is pronounced.…”

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confidence: 99%

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Single Crystalline β-Ag₂Te Nanowire as a New Topological Insulator

Lee

Yoo

et al. 2012

Nano Lett.

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A recent theoretical study suggested that Ag(2)Te is a topological insulator with a highly anisotropic Dirac cone. Novel physics in the topological insulators with an anisotropic Dirac cone is anticipated due to the violation of rotational invariance. From magnetoresistance (MR) measurements of Ag(2)Te nanowires (NWs), we have observed Aharanov-Bohm (AB) oscillation, which is attributed to the quantum interference of electron phase around the perimeter of the NW. Angle and temperature dependences of the AB oscillation indicate the existence of conducting surface states in the NWs, confirming that Ag(2)Te is a topological insulator. For Ag(2)Te nanoplates (NPLs), we have observed high carrier mobility exceeding 22,000 cm(2)/(V s) and pronounced Shubnikov-de Haas (SdH) oscillation. From the SdH oscillation, we have obtained Fermi state parameters of the Ag(2)Te NPLs, which can provide valuable information on Ag(2)Te. Understanding the basic physics of the topological insulator with an anisotropic Dirac cone could lead to new applications in nanoelectronics and spintronics.

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confidence: 75%

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confidence: 99%

Single Crystalline β-Ag₂Te Nanowire as a New Topological Insulator

Lee

Yoo

et al. 2012

Nano Lett.

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“…Compared to the -400µV/K observed for the undoped, polycrystalline sample, this would suggest that Te substitution drives the systems towards a charge balanced state due to its lower vapor pressure (fewer anion vacancies). However, we remain cautious because AgBiTe 2 is also naturally n-type 27 . Also, Seebeck coefficient measurements become more difficult and absolute errors increase for resistive samples.…”

Section: Experimental Procedures and Efforts To Attain P-type Dopingmentioning

confidence: 99%

Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case ofp-TypeAgBiSe2

2015

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We study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe 2 . We present an apparent realization of the thermoelectric benefits of one-dimensional "plate-like" carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe 2 , while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe 2 has already exhibited a ZT value of 1.5 in a high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi 2 Te 3 and PbTe. From our first principles and Boltzmann transport calculations we estimate the performance of p-type AgBiSe 2 .

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“…However, alloying of agBiTe 2 with another phases was conducted. For example, Sakakibara et al [34,35] mixed agBiTe 2 and ag 2 Te, synthesized by traditional melting method and carried out the measurements of the thermoelectric properties for these composites. avramova and Plachkova [50] tested electrical resistivity for thermoelectric materials in the GeTe-agBiTe 2 system.…”

Section: Resultsmentioning

confidence: 99%

“…However, some attempts have been made to mix it with other thermoelectric materials based on bismuth telluride. For example Lee et al [33] investigated thermoelectric properties of Bi 0.5 Sb 1.5 Te 3 /ag 2 Te bulk composites with size-and shapecontrolled ag 2 Te nano-particles dispersion, Sakakibara et al [34,35] measured thermoelectric properties for agBiTe 2 -ag 2 Te composites, Fang et al [36] investigated thermoelectric properties of silver telluride-bismuth telluride nanowire heterostructure. Since the influence of ag 2 Te addition on thermoelectric properties of Bi 2 Te 3 has not been reported so far, it was decided to investigate thermoelectric properties of alloys in ag 2 Te -Bi 2 Te 3 pseudo-binary system.…”

Section: Introductionmentioning

confidence: 99%

Archives of Metallurgy and Materials

Drzewowska,

Lan,

Onderka

2021

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The resistivity, Seebeck coefficient and thermal diffusivity were determined for Bi 2 Te 3 + ag 2 Te composite mixtures. Subsequent measurements were carried out in the temperature range from 20 to 270°C, and for compositions from pure Bi 2 Te 3 to x ag 2 Te = 0.65 selected along the pseudo-binary section of ag-Bi-Te ternary system. it was found that conductivity vs. temperature dependence shows visible jump between 140 and 150°C in samples with highest ag 2 Te content, which is due to monoclinic => cubic ag 2 Te phase transformation. Measured Seebeck coefficient is negative for all samples indicating they are n-type semiconductors. evaluated power factor is of the order 1.52•10 -3 and it decreases with increasing ag 2 Te content (at. %). recalculated thermal conductivity is of the order of unity in w/(m k), and is decreasing with ag 2 Te addition. Finally, evaluated Figure of Merit is 0.43 at 100°C and decreases with temperature rise.

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Hall Mobility Enhancement in AgBiTe₂–Ag₂Te Composites

Cited by 3 publications

References 6 publications

Single Crystalline β-Ag₂Te Nanowire as a New Topological Insulator

Single Crystalline β-Ag₂Te Nanowire as a New Topological Insulator

Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case ofp-TypeAgBiSe2

Archives of Metallurgy and Materials

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Hall Mobility Enhancement in AgBiTe2–Ag2Te Composites

Cited by 3 publications

References 6 publications

Single Crystalline β-Ag2Te Nanowire as a New Topological Insulator

Single Crystalline β-Ag2Te Nanowire as a New Topological Insulator

Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case ofp-TypeAgBiSe2

Archives of Metallurgy and Materials

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Product

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Hall Mobility Enhancement in AgBiTe₂–Ag₂Te Composites

Single Crystalline β-Ag₂Te Nanowire as a New Topological Insulator

Single Crystalline β-Ag₂Te Nanowire as a New Topological Insulator