Hall Effect Modeling in FEM Simulators and Comparison to
                                Experimental Results in Silicon and Printed Sensors

Frem, Leonardo A

doi:10.15368/theses.2016.86

Cited by 1 publication

(2 citation statements)

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“…COMSOL is a FEM simulation software in which the geometric and process parameters of Hall sensors can be easily varied for further analysis. The 2D and 3D models can be chosen from diverse modules to perform the studies, such as AC/DC and semiconductor modules [ 17 , 18 , 19 ]. Besides this, the relationships between the temperature and sensitivities can be investigated by considering the temperature coefficient [ 17 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

“…The 2D and 3D models can be chosen from diverse modules to perform the studies, such as AC/DC and semiconductor modules [ 17 , 18 , 19 ]. Besides this, the relationships between the temperature and sensitivities can be investigated by considering the temperature coefficient [ 17 , 20 ]. COMSOL simulation results can also be used to compare with the Verilog-A model implemented in Cadence [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

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A New Design of a Single-Device 3D Hall Sensor: Cross-Shaped 3D Hall Sensor

Tang

Lyu

Wang

et al. 2018

Sensors

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In this paper, a new single-device three-dimensional (3D) Hall sensor called a cross-shaped 3D Hall device is designed based on the five-contact vertical Hall device. Some of the device parameters are based on 0.18 μm BCDliteTM technology provided by GLOBALFOUNDRIES. Two-dimensional (2D) and 3D finite element models implemented in COMSOL are applied to understand the device behavior under a constant magnetic field. Besides this, the influence of the sensing contacts, active region’s depth, and P-type layers are taken into account by analyzing the distribution of the voltage along the top edge and the current density inside the devices. Due to the short-circuiting effect, the sensing contacts lead to degradation in sensitivities. The P-type layers and a deeper active region in turn are responsible for the improvement of sensitivities. To distinguish the P-type layer from the active region which plays the dominant role in reducing the short-circuiting effect, the current-related sensitivity of the top edge (Stop) is defined. It is found that the short-circuiting effect fades as the depth of the active region grows. Despite the P-type layers, the behavior changes a little. When the depth of the active region is 7 μm and the thickness of the P-type layers is 3 μm, the sensitivities in the x, y, and z directions can reach 91.70 V/AT, 92.36 V/AT, and 87.10 V/AT, respectively.

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