Hall effect in MnTe films

Angadi, M. A.; Thanigaimani, V.

doi:10.1016/0040-6090(94)90259-3

Cited by 6 publications

(5 citation statements)

References 18 publications

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“…In the MnSe compounds, the cubic structure stabilizes [11]. The galvanomagnetic properties, Neel temperature, and resistivity depend on film thickness and substrate temperature [12,13].…”

Section: Introductionmentioning

confidence: 99%

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films

Aplesnin

Романова

Sitnikov

et al. 2018

Semicond. Sci. Technol.

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The correlation between the dc and ac electrical resistance and the structural, magnetic, and thermoelectric properties of polycrystalline MnSe 1−X Te Х (0.3X0.4) manganese chalcogenide films in the temperature range of 80-400 K has been investigated. Inhomogeneous electronic states and transitions between them accompanied by structural lattice deformations have been found at temperatures including the Neel temperature region. The magnetic susceptibility maximum above the Neel temperature in a magnetic field of 8.6 kOe has been observed. Temperature ranges of the coexistence of two types of electrically inhomogeneous states have been established by impedance spectroscopy in the frequency range of 0.1-1000 kHz and the change of the hopping conductivity for diffusion one accompanied by the magnetic susceptibility minimum has been found. The magnetoresistance in magnetic fields of up to 12 kОе has been established. It has been revealed that the thermopower and magnetoresistance change its sign upon heating. The experimental data are explained using a spin polaron model with the localization of polarons and formation of the electron phase-separation. The alternation of magnetoresistance in sign is attributed to the ferromagnetic orbital ordering of electrons and the negative magnetoresistance is explained by suppression of spin fluctuations in a magnetic field.

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“…In the MnSe compounds, the cubic structure stabilizes [11]. The galvanomagnetic properties, Neel temperature, and resistivity depend on film thickness and substrate temperature [12,13].…”

Section: Introductionmentioning

confidence: 99%

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films

Aplesnin

Романова

Sitnikov

et al. 2018

Semicond. Sci. Technol.

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“…The backwards maintenance technology brings out increase of maintenance cost, decrease of quality, shortening of service life and prolonged repair period [1,2]. In this situation, it is necessary to lead into new concept of maintenance as soon as possible -"diesel engine remanufacturing" which promotes overall maintenance level for enterprise, utilizes fully resources and uses the surplus valve of waste component, reduces manufacturing cost and enhances manufacturing quality [3,4]. It is green system engineering coincides with national strategy of sustainable development.…”

Section: Introductionmentioning

confidence: 99%

Novel Remanufacturing Technology as an Alternative to Maintenance for Diesel Engine and its Benefit Analysis

Cai

Zhang

Liang

2011

AMR

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To solve the maintaining shortcoming of diesel engine, the remanufacturing technology idea of diesel engines is put forward and discussed preliminary. Then it summarizes the difference and processing between remanufacturing and maintenance for diesel engine, and the technical measures that may bring about economic benefits for the enterprise. Then the application perspective of remanufacturing technology for equipment diesel engines was outlooked. Notable economy benefit will be gained prolonging the service life of diesel engine.

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“…The major problem in the depositing c-BN on high speed steels is the poor adhesion [1,2] . As the amorphous boron nitride (a-BN) or hexagonal boron nitride (h-BN) exists always between the c-BN film and high speed steels substrate [3,4] . Another factor is the strength of the substrate is too soft compared with such high hardness and residual stress of c-BN.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Mechanical Properties and Microstructure of Boron Films Implanted by Polyenergetic Nitrogen Ion

Cai

Zhang

et al. 2008

KEM

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In this paper, boron films were deposited on W6Mo5Cr4V2 high speed steel (HSS) via ion beam sputtering of boron target and implanted with polyenergetic(50 keV, 30 keV, 10 keV) nitrogen ions. The mechanical properties of the implanted layer were tested by Vicker`s hardness and SKODA wear tester. The microstructure of the implanted layer was analysed by X-ray Photoelectron Spectroscopy (XPS) and Fourier Infrared (IR) spectroscopy. Experimental results showed that the HSS substrate was intensified obviously after the implantation of boron and nitrogen ion. When the nitrogen dose equals to 12.8×1017 ions/cm2, the hardness reaches its highest value, HV1982 and the relative wearability was increased for about ten times under the load of 30N. XPS depth concentration profiles show an interfacial mixing between film and substrate, and compared with monoenergetic ion implantation, polyenergetic ion implanted layer have an even N/B distribution. Combined with XPS and IR analysis results, It can conclude that boron exists in the form of boron nitride and first as a-BN or h-BN, with the depth decreasing, it has a tendency to transform to c-BN.

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Hall effect in MnTe films

Cited by 6 publications

References 18 publications

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films

The alternating-sign magnetoresistance of polycrystalline manganese chalcogenide films

Novel Remanufacturing Technology as an Alternative to Maintenance for Diesel Engine and its Benefit Analysis

Investigation of Mechanical Properties and Microstructure of Boron Films Implanted by Polyenergetic Nitrogen Ion

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