Hall effect in InAs/GaAs superlattices with quantum dots: identifying the presence of deep level defects

Abstract

We have carried out van der Pauw resistivity and Hall effect measurements on a series of Molecular Beam Epitaxy InAs/GaAs superlattice samples containing InAs quantum dots. Three growth parameters were varied, the InAs coverage, the number of repetitions of the InAs/GaAs layers, and the GaAs spacer thickness. The results can be grouped in two sets, those samples presenting low and high resistivity. The group presenting low resistivity is composed by the samples with GaAs spacer of 30 monolayers (ML) and InAs coverage of 1.9 monolayers. The group presenting high resistivity is composed of samples with GaAs spacer of 40 ML. We claim that the high resistivity characteristic is due to the presence of deep level. Increasing the spacer from 30 to 40 ML decouples the InAs planes favouring the deep level formation.

Optical Properties of the Strained Layer Superlattices (GaAs)₆/(GaP)_m(001) (m=2, 4 and 6)

“…The progress in novel growth techniques, has made it possible to grow high quality semiconductor heterostructures and superlattices (SLs) from heavily lattice mismatched materials [1], up to a lattice mismatch of about 7% if the layers are kept sufficiently thin. The semiconducting strained SLs are potential materials for various electronic and optoelectronic devices [2,3].…”